TECHNICAL PROGRAM Poster Session
15:00 - 16:30, May 12 (All poster presentstions are allocated at this session.)
15:00 - 16:30, May 13 (Optional poster session.)
Chair: Shu-Tong Chang (National Chung Hsing University, Taiwan
Circuits / Applications
Mon-P1-01Crosstalk Reduction Technique Between Dual SiGe Power Amplifiers
Huan-Lin Chang, P.-S. Kuo, W.-C. Hua, Chun-Ping Lin, Che-Yung Lin, C. W. Liu (National Taiwan University,
Taiwan)
A 2.4GHz Low Power High Linearity Mixerfor Direct-Conversion Receivers
Yu-Min Mu (Ming Hsin University of Science and Technology, Taiwan)
A 10.5 Gb/s Transimpedance Amplifier Using Capacitive Emitter Degeneration Technique
Ji-Chen Huang, Kuang-Sheng Lai, Klaus Y.-J. Hsu (National Tsing Hua University, Taiwan)
A 1.25GHz SiGe Transimpedance Amplifier Using a DC feedback Loop
Cheng Juang (MignHsin University, Taiwan)
Device-Related Materials
Mon-P1-05In-Line Characterization of pMOS Devices with Embedded SiGe and Hetero Bipolar Transistor Base
Layers by High-Resolution X-Ray Diffraction
Roger Loo, A. Hikavyy, D. Nguyen (IMEC, Belgium), P. Ryan, M. Wormington, J. Hopkins (BEDE, United
Kingdom)
Characterization and Analyses of Interface Structures in Directly Bonded Si(011) / Si(001) Substrates
Eiji Toyoda, Akira Sakai, Osamu Nakatuka, Shigeaki Zaima, Masaki Ogawa (Nagoya University, Japan),
Hiromichi Isogai, Takeshi Senda, Koji Izunome (Covalent Materials Corporation, Japan), Kazuhiko Omote
(Rigaku Corporation, Japan)
Development of Thin SiGe Virtual Substrate with High Ge Composition by Ion Implantation Method
Yusuke Hoshi, Kentarou Sawano, Yoshiyasu Hiraoka, Yuu Satoh, Atsunori Yamada, Yuta Ogawa, Yasuhiro
Shiraki (Musashi Insutitute of Technology, Japan), Noritaka Usami (Tohoku University, Japan), Kiyokazu
Nakagawa (University of Yamanashi, Japan)
Molecular Epitaxial Growth of Mn5Ge3/Ge Heterostructures for Injection of Spin-Polarized
Currents in IV-Group Semiconductors
Vinh Le Thanh, Olive Mendez (CINaM - CNRS, Universite de la Mediterranee, France)
Epitaxial Growth of Si / SiGe into Cavity Formed by Selective Etching of SiGe
Yuji Yamamoto, Klaus Koepke, Guenter Weidner, Bernd Tillack (IHP, Germany)
Selective Growth of Self-Assembling Si and SiGe Quantum Dots
Katsunori Makihara, Akira Kawanami, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima
University, Japan)
Novel Method to Introduce Uniaxial Tensile Strain in Ge by Microfabrication of Ge/Si1-xGex
Structures on Si(001) Substrates
Osamu Nakatsuka, Takuya Mizutani, Hiroki Kondo, Masaki Ogawa, Shigeaki Zaima (Nagoya University,
Japan), Akira Sakai (Osaka University, Japan)
Observation of Pronounced Effect of Compressive Strain on Room-Temperature Transport
Properties of 2DHG Confined in Ge Quantum Wells
Maksym Myronov, K. Sawano, Y. Shiraki (Musashi Institute of Technology, Japan), K.M. Itoh (Keio
University, Japan)
Microstructures in Directly Bonded Si Substrates
Akira Sakai, Y. Ohara, T. Ueda (Osaka University, Japan), O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda
(Nagoya University, Japan), H. Isogai, T. Senda, K. Izunome (Covalent Materials Corporation, Japan), S.
Kimura, H. Tajii, O. Sakata (JASRI, Japan)
Strain Relaxation Mechanisms in Compositionally Uniform and Step-Graded SiGe Films Grown on
Si(110) Substrates
Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa (CCST University of Yamanashi,
Japan), Kentarou Sawano, Yasuhiro Shiraki (ARL Musashi Institute of Technology, Japan), Noritaka Usami,
Kazuo Nakajima (IMR Tohoku University, Japan)
Epitaxial Growth of Gd2O3 on Ge Films Grown by Surfactant-Mediated Epitaxy on Si(001) Substrates
T. F. Wietler, A. Laha, E. Bugiel, M. Czernohorsky, R. Dargis, A. Fissel, and H. J. Osten (Leibniz Universitat
Hannover, Germany)
DC and 1/f Noise Characteristics of Strained-Si NMOSFETs Using Chemical-Mechanical-Polishing Technique
Hau-Yu Lin, Yen Ping Wang, Shoou-Jinn Chang (National Cheng Kung University, Taiwan), San-Lein Wu
(Cheng Shiu University, Taiwan)
Enhanced Relaxation in SiGe Films with a Buried Si: B Layer by H Implantation
Pang Shiu Chen (Minghsin University of Science and Technology, Taiwan)
Theoretical Investigation on Ge Vacancies under Uniaxial Strain -Generation of Acceptor Level
Induced by Uniaxial Strain-
Kenji Shiraishi (University of Tsukuba, Japan), Atsushi Oshiyama (University of Tokyo, Japan)
Photoemission Study of Ultrathin Gemanium Oxide/ Ge(100) Interfaces
Hideki Murakami, M. Miura, A. Ohta, R. Yogauchi, S. Higashi, S. Miyazaki (Hiroshima University, Japan)
The Studies of Self-Assembled Ge Islands Produced by Excimer Laser Annealing
Min-Hung Lee, Y.-T. Liu, R.-S. Syu, K.-W. Shen (National Taiwan Normal University, Taiwan), H. T. Chen
(Industrial Technology Research Institute, Taiwan), C.-H. Lee (National Taiwan University Taiwan), G.-L.
Luo, J. Shieh (National Nano Device Laboratories, Taiwan), S. W. Lee (National Central University, Taiwan)
Local Strain Control of SiGe by Selective Ion Implantation Technique
K. Sawano, Y. Hoshi, Y. Hiraoka, S. Kannan, Y. Shiraki (Musashi Institute of Technology, Japan), N. Usami
(Tohoku University, Japan), K. Nakagawa (University of Yamanashi, Japan)
Ge Diffusion during Ge-Condensation Process
David Leadley, C.S. Beer, R.J.H. Morris, E.H.C. Parker, T.E. Whall, Maksym Myronov (University of Warwick,
United Kingdom)
The Compositional Distribution of Ge Islands Grown by Ultra-High Vacuum Chemical Vapor Deposition
Sheng-Wei Lee, S.W. Lee, H.T. Chang, C.A. Chueh, S. L. Cheng (National Central University, Taiwan),
C.H. Lee, C.W. Liu (National Taiwan University, Taiwan)
Growth and Characterization of Ultra-Thin Strain Relaxed SiGe on Si (001) Prepared by Molecular
Beam Epitaxy
Ming Zhao, G.V. Hansson, W.-X. Ni (Linkoping University, Sweden)
Growth of Highly Strained SiGe Layers Using Non-Selective Epitaxy
Prasanna Khare, Robert Gaston, Michael Goulding, Ronald Sampson (STMicroelectronics, USA), Dieter
Schroder (Arizona State University, USA)
Devices
Mon-P1-026Optically Active Er Centers in Si/SiGe:Er Structures: Origin and Conditions for Achievement of the
Population Inversion under Optical Pumping
Ludmila Krasilnikova (Russian Academy of Sciences, Russia)
Ge Base Profile Engineering in SiGeC HBTs for Power Amplifier Applications
Pierre-marie Mans (STMicroelectronics / Laboratoire IMS, France)
Room-Temperature Operated Si/Si1-xGex Hole-Tunneling Symmetrical Double-Quantum-Well RTD
Formed by Sputter Epitaxy
Yoshiyuki Suda, Hiroaki Hanafusa (Tokyo University of Agriculture & Technology, Japan)
Improving the Performance of SiGe Metal-Semiconductor-Metal Photodetectors by Using an
Amorphous Silicon Passivation Layer
Yu-Hung Chen (National Chung Hsing University, Taiwan
Investigation of Interface Characteristics in Strained-Si nMOSFETs
Cheng-Wen Kuo, Yen Ping Wang, Shoou-Jinn Chang (National Cheng Kung University, Taiwan), San-Lein
Wu (Cheng Shiu University, Taiwan)
Performance Improvements of SiGe HBTs by Optimizing the Collector and Emitter Design
Christian Schippel, Ralf Granzner, Frank Schwierz (TU Ilmenau, Germany), Holger Hohnemann, Volker
Dudek (Atmel Germany GmbH, Germany)
Ge and Ge-Si Based Diodes for 1310 nm Geiger Mode Single Photon Detection
Malcolm Carroll, John Seamons, Darwin Serkland, Kent Childs, Robert Jarecki, Todd Bauer, Kevin Saiz
(Sandia National Laboratories, USA)
Impact Ionization Enhancement in Short-Channel Strained-Si nMOSFETs
Po-Chin Huang, Shoou-Jinn Chang (National Cheng Kung University, Taiwan), Ting-Kuo Kang, Yu-Huan
Sa, C. Y. Wu, San-Lein Wu (Cheng Shiu University, Taiwan)
Electroluminescence and Photoconductivity of GeSi Heterostructures with Self-Assembled Islands in
the Wavelength Range 1.3-1.55 m
Dmitry Lobanov, A.V.Novikov, K.E.Kudryavtsev, A.N.Yablonskiy, A.V.Antonov, D.V.Shengurov, Yu.N.Drozdov,
Z.F.Krasilnik (Institute for Physics of Microstructures RAS, Russia), N.D.Zakharov, D.P.Werner (Max-
Planck-Institut fur Mikrostrukturphysik, Germany)
Fabrication and Optical/Electrical Characteristics of Germanium Quantum-Dots by Selective Oxidation
Chao Hung Wang, K.C. Wang, W.H. Chu, C.P. Liu (National Cheng Kung University, Taiwan)
The Effects of STI Induced Mechanical Strain on GIDL Current in Hf-based and SiON MOSFETs
Jing Chyi Liao (National Cheng Kung University, Taiwan)
Low Power Enhanced Charge Retention of Nanocrystal Metal-Oxide-Semiconductor Capacitors with
Multi-stack Germanium Quantum Dots
Pei-Wen Li, S. H. Hsu, L. Y. Yang (National Central University, Taiwan)
Effect of Si Cap on Electroluminescence Performance of Ge Quantum-Dot Diodes
Hung Ming Chen, Y. C. Lai, C. H. Kuan (National Taiwan University, Taiwan), Y. H. Peng (Lan Yang
Institute of Technology, Taiwan), P. S. Chen (Ming Hsin University of Science and Technology, Taiwan)
A Base Transit Time Model Considering Electron Temperature Effect in SiGeC HBT
Yao Li (University of Science and Technology of China, China)
Si:Er/O and SiGe Layered Structures for Waveguide LEDs
Amir Karim, C.-X Du, G.V. Hansson (Linkoping University, Sweden), M.K. Linnarsson (Royal Institute of
Technology, Sweden)
Photoluminescence Study of Nanocrystalline-Si(Ge) Embedded in Mesoporous Silica
Bouchaib Adnane, Per-Olof Holtz (Linkoping University, Sweden), Yi-Fan Lai, Jia-Min Shieh, Wei-Xin Ni
(National Nano Device Laboratories, Taiwan)
Improved Electrical Performance of Germanium p-MOSFETs with Atomic-Layer-Deposited Al2O3
High-k Gate Dielectric
Guang-Li Luo (National Nano Device Laboratories, Taiwan), Chao-Ching Cheng, Jun-Cheng Liu, Chun-
Yen Chang (National Chiao-Tung University, Taiwan), Chao-Hsin Chien (National Chiao-Tung University
& National Nano Device Laboratories, Taiwan), Chi-Chung Kei, Da-Ren Liu, Chien-Nan Hsiao (National
Applied Research Laboratories, Taiwan)
Doping Profile and Ge-Dose Co-Design for Electrical Characteristic Optimization of SiGe HBT Devices
Yiming Li, Ying-Chieh Chen, Chih Hong Hwang, (National Chiao Tung University, Taiwan)
Valence Band Deformation Potentials in Semiconductors
Goran Milovanovic (Institute for Microelectronics, Austria)
Comparision of the Effects of SIC Design and Ge Distribution on the ft vs. BVCEO Characteristics of
SiGe HBTs
Christian Schippel, Frank Schwierz, Ralf Granzner (TU Ilmenau, Germany)
SOLAR-CELL Application on the Single and Multi crystalline Si Solar Cell by H2 Forming Gas
Jyh-Jier Ho, Liang-Yi Chen (National Taiwan Ocean University, Taiwan), Chin-Ying Chen (Fortune
Institute of Technology, Taiwan)
A Simulation Study of Phonon-Assisted Tunneling Effect in Silicon P-N Junctions
Edward Chen, D.S. Pan (Univeristy of California, USA)
Performance Improvement of Multi-Crystal Silicon Films by Etching Techniques for Solar Cell
Applications
Jyh-Jier Ho, Zong-Zhi Ye (National Taiwan Ocean University, Taiwan), Chin-Ying Chen (Fortune Institute
of Technology, Taiwan)
Process Technology
Mon-P1-049Design and Implementation of JPEG2000 Encoder Using VHDL
KanchanH Wagh (Engg. College, India)
Conformal Ultra Shallow Junctions by Vapor Phase Doping with Boron
Ngoc Duy Nguyen, F. Leys, S. Takeuchi, R. Loo, M. Caymax, P. Eyben, W. Vandervorst (IMEC, Belgium)
Change of H-Termination on Wet-Cleaned Si(100) and Ge(100) by Heat-Treatment in H2 or Ar
Junichi Murota, Atsushi Uto, Masao Sakuraba (Tohoku University, Japan), Matty Caymax (IMEC, Belgium)
Effect of Hydrogen on Initial Growth of Sn and Ge1-xSnx on Ge(001) Substrates
Osamu Nakatsuka, Masahiro Yamazaki, Tatsuya Shinoda, Masaki Ogawa, Shigeaki Zaima (Nagoya
University, Japan), Akira Sakai (Osaka University, Japan)
Study of Antimony Activation in Strained Silicon
D. Buca, H. Trinkaus, B. Hollander, U. Breuer, S. Mantl (Forschungszentrum Juelich, Germany)
Nickel Germanide Formation: Orientation and Temperature Effects
Cheng-Yi Peng (National Taiwan University, Taiwan)
Effects of Ge Content in SiGe Channel on Electrical Characteristics of High-k Gated MOS Device
Kuei-Shu Chang-Liao, Chung-Hao Fu, Kuen-Hong Tsai, Tien Ko Wang (National Tsing Hua University,
Taiwan)
3D TCAD Simulations of Strained Si CMOS Devices with Silicon-Based Alloy Stressors and Stress CESL
Shin-Jiun Kuang, Wei-Ching Wang, Jacky Huang, Shu-Tong Chang (National Chung Hsing University, Taiwan)
Ge Incorporation in Si by Pulsed Laser Processing
Frederic Fossard, Jacques Boulmer, Dominique Debarre, Veronique Mathet, Jean-Luc Perrossier, David
Bouville, Daniel Bouchier (IEF UMR8622, CNRS, univ Paris Sud 91405 Orsay cedex, France), Franck
Fortuna (CSNSM, IN2P3-CNRS bat 108, univ Paris Sud 91405 Orsay cedex, France)
Template-Assisted Fabrication of 2D Periodic Arrays of Nanoholes on Si0.8Ge0.2 Virtual Substrate
Chien-Hsun Wang, H. Chen, S. W. Lee ( National Central University, Taiwan)
New Method to Calibrate the Pattern Dependency of Selective Epitaxy of SiGe Layers
M. Kolahdouz, J Hallstedt, M Ostling, H H Radamson (Royal Institute of Technology KTH, Sweden), D Riley,
R Wise (Texas Instruments, USA)
Strained-Engineered MOSFETs: Design and Optimization Using TCAD
Tapas Maiti, T. K. Maiti, C. K. Maiti (Indian Institute of Technology, India)
Kinetics of Ge-Rich SiGe Film Growth by CVD
Yu-Hsuan Kuo, Yi-Ren Chen (National Taiwan University, Taiwan)
HCl In-Situ Etching of Si Prior and during the Epitaxial Growth Using RPCVD
M. Kolahdouz, J Hallstedt, M Ostling, H H Radamson (Royal Institute of Technology KTH, Sweden), D Riley,
R Wise (Texas Instruments, USA)
A Novel Two-Bit High-k Y2O3 Flash Memory
Jing-Wei Chen (Chang Gung University, Taiwan)
Selective and Rapid Heating Method for Polycrystallization of Amorphous Si Using Microwave
Plasma Irradiation
Kiyokazu Nakagawa (University of Yamanashi, Japan)
Two-Bit High-k Y2O3 Flash Memory
Jing Wei Chen (Chang Gung University, Taiwan)