ISTDM 2008 General Chair - Prof. Wei-Xin Ni
ISTDM 2008 Advisory Committee - Prof. Junichi Murota
ICSI Advisory Committee - Prof. Erich Kasper

Opening address
Dr. Chih-Yuan Lu ,President of Macronix International Co., Ltd., Taiwan

HBT and BICMOS
Chair: Tillack Bernd (IHP, Germany)
Chair: Ya-Hong Xie (UCLA, USA), Wen-Chin Lee (TSMC, Taiwan)

Advanced SiGe:C BiCMOS Technologies Using Selective Base Epitaxy
Alain Chantre, P. Chevalier, G. Avenier, J. Duverbay, B. Vandelle, F. Brossard, D. Dutartre (STMicroelectronics, France)

Choosing an HBT for Next Generation SiGe:C BiCMOS
Johan Donkers, G.A.M. Hurkx, T. Vanhoucke, P. Meunier-Beillard, M.C.J.C.M. Kramer, W. van Noort, E.A. Hijzen (NXP Semiconductors, Belgium)

A  High-Speed  High-VoltageComplementary  SEG  SiGe  BiCMOS  Process  for  High-Performance
Analog Products
Tatsuya  Tominari,  Y.  Yoshida,  H.  Sato,  T.  Aoki,  T.  Hashimoto  (Micro  Device  Division,  HITACHI,  Ltd., Japan), M. Miura (Central Research Laboratory, Hitachi, Ltd., Japan), K. Washio (Hitachi ULSI Systems Co., Ltd., Japan)

Epitaxial Strained Silicon Passivation of the Ge/High-k Interface in Germanium pMOSFETs
Frederik Leys, J. Mitard, G. Pourtois, M. Houssa, B. Kaczer, B. De Jaeger, R. Loo, M. Meuris, M. Caymax (IMEC,  Belgium),  K.  Martens,  M.M.  Heyns  (IMEC  &  K.U.,  Belgium),  D.P.  Brunco  (Intel  Corporation, Sweden)

Strain  Enhanced  nMOS  Using  In-Situ  Doped  Embedded  Si:C  S/D  Stressors  With  Up  To  1.5% Substitutional Carbon Content Grown Using A Novel Deposition Process
Peter Verheyen, F. Clemente, H. Bender, D. Shamiryan, R. Loo, T. Hoffmann (IMEC, Belgium), C. Kerner
(IMEC, Belarus), S.G. Thomas, V. Machkaoutsan, M. Bauer, D. Weeks (ASM, United States)

Transistor Size Dependence of Variation of Threshold Voltage in Strained Si MOSFETs
Naohari Sugiyama, T.Numata, N.Hirashita, T.Irisawa, S.Takagi (MIRAI-AIST, Japan)

Approach to Ballisticity in High Performance Germanium pMOSFETs
David  Leadley,  A.  Dobbie,  T.E.  Whall,  E.H.C.  Parker  (University  of  Warwick,  United  Kingdom),  B.  De
Jaeger, M. Meuris (IMEC, Belgium)

Strain-ControlledValleySplitting in Si-SiGe HeterostructuresViktor Sverdlov,Siegfried SELBERHERR (Institute for Microelectronics, TU Wien, Austria)

Ge/SiGe on Insulator
Chair: Roger Loo (IMEC, Belgium), James Fiorenza (Amberwave, USA)

Global Integration of 100 % Ge Layers on Si via Oxide Heterostructures
Thomas Schroeder (IHP, Germany)

Fabrication of Nanowire Made by Ge Condensation Technique for Multichannel Technology
Jean-Francois  Damlencourt,  Descombes  Sophie,  Morand  Yves  (STMicroelectronics,  France),  Benevent Veronique, Rivallin Pierrette, Hartmann Jean-Michel, Gautier Pauline, Vizioz Christian Saracco Emeline, Vincent Benjamin,  (CEA/LETI-Minatec, France)

On the Hole Formation in Ge-Rich SiGe-on-Insulator and Ge-on-insulator Substrates Fabricated by
Ge Condensation Process
Norio Hirashita (Association of Super-Advanced Electronics Technologies (ASET), Japan)

Electrical Properties of Poly-Ge on Glass Substrate Grown by Two-Step Solid-Phase Crystallization
Kaoru Toko, I. Nakao, T. Sadoh, T. Noguchi, M. Miyao (Kyushu University, Japan)

Lateral epitaxial growth of Ge on silicon oxide by ultrahigh vacuum chemical vapor deposition
Vincenzo Cammilleri, Yam Vy, Fossard Frederic, Renard Charle, Bouchier Daniel (IEF, CNRS UMR 8622, Univ Paris-Sud, Orsay, F-91405, France), Zheng Yunlin (Institut des Nanosciences de Paris (INSP), Paris,
F-75015,  France),  Fazzini  Pier-Francesco,  Ortolani  Luca,  Houdellier  Florent,  Hytch  Martin  (CNRS, CEMES (UPR 8011), Toulouse, F-31055, France)

Characterization and Epitaxial Growth
Chair: Seiichi Miyazaki (Hiroshima University, Japan), Shoou-Jinn Chang (National Cheng Kung University, Taiwan

Defect Delineation and Characterization in SiGe, Ge and other Semiconductor-on-insulator Structures
Alexandra Abbadie, F. Allibert, F. Brunier (SOITEC, France)

Scalability of eSiGe Technology for 32 nm Node and Beyond
Nobuaki Yasutake, H. Okamoto, N. Kusunoki, H. Itokawa, I. Mizushima, S. Okamoto, T. Ishida, N. Aoki, A. Azuma, Y. Toyoshima (Toshiba Corporation, Japan)

Performance and Scaling of cMOSFETs on Ultra-Thin Strained SOI Francois Andrieu, V. Barrel, T. Poiroux, O. Faynot, S. Deleonibus (CEA-LETI Minatec, France)

High Hole Mobility Strained-SiGe and Strained-Ge Channel p-MOSFETs
Leo  Gomez,  C.  Ni  Chleirigh,  J.L.  Hoyt  (Massachusetts  Institute  of  Technology,  USA),  Y.  Wang,  X.  Wang
(Ultratech Inc., USA)

Stressors and Device Characterization
Chair: Shigeaki Zaima (Nagoya University, Japan), Pei-Wen Li (National Central University, Taiwan

Group-IV Semiconductors as Source/Drain Stressors for Strained Transistors
Yee-Chia Yeo (National University of Singapore, Singapore)

Low-Frequency Noise in Buried-Channel SiGe n-MODFETs
Anuj Madan (Georgia Institute of Technology, United States)

Comparison of a Novel FSA and a QSA SiGe:C Architecture for Reverse Operation
Arturo  Sibaja-Hernandez,  Stefaan  Van  Huylenbroeck,  Rafael  Venegas,  Stefaan  Decoutere  (IMEC, Belgium), Johan Donkers, Mark Kramer (NXP-TSMC, Belgium)

Optoelectronics
Chair: Viktor Sverdlov (Institute for Microelectronics, TU Wien, Austria), Mao-Nan Chang (NDL, Taiwan)

Epitaxial Ge, GeSn, and SiGeSn Materials for New Optoelectronic Applications
John  Kouvetakis,  Jose  Menendez  (Arizona  State  University,  USA),  Richard  Soref  (Air  Force  Research
Laboratory, USA)

10Gbps Ge/Si Avalanche Photodiodes with 153GHz Gain Bandwidth Product
Yimin Kang, Mike Morse, Mario J. Paniccia (Intel Corporation, United States), Stas Litski, Moshe Zadka, Gadi Sarid (Intel Electronics Ltd, Israel), Yin-Hao Kuo, John Bowers (Univ of California, Santa Barbara, United  States),  Andreas  Beling,  Joe  Campbell  (Univ  of  Virginia,  United  States),  Alexandre  Pauchard (Synova, Switzerland)

Ge and Ge-Si based Diodes for 1310 nm Geiger Mode Single Photon Detection
Malcolm Carroll, John Seamons, Darwin Serkland, Kent Childs, Robert Jarecki, Todd Bauer, Kevin Saiz (Sandia National Laboratories, United States)

Flexible Ge-on-Polyimide Photodetector
Wei-Shuo Ho (Graduate Institute of Electronics Engineering, National Taiwan University, Taiwan)

Electrical Interface Characterization of Non-Si Based MOSFETs: Challenges and Solutions
Koen Martens, B. Kaczer, H. Maes, G. Groeseneken (IMEC and KULeuven, ESAT department, Belgium)

Selective SiGe Etching with HCl Gas: In-Plane Anisotropy and Propagation Kinetics
Nicolas  Loubet,  Stephane  Denorme,  Francois  Leverd,  Bastien  Orlando,  Gregory  Bidal,  Didier  Dutartre
(STMicroelectronics, France)

17 :15  Tue-S7-03

Stress Simulation of a Germanium Reverse Embedded-SiGe PMOSFET
James Fiorenza, Ji-Soo Park, Anthony Lochtefeld (AmberWave Systems Corporation, United States)

17:30  Tue-S7-04

Characterization of Thermal Stability of HfO2/SiONx/Ge(100) Stacked Structures Using Photoemission Spectroscopy
Akio  Ohta,  Akio  Ohta,  Hiroshi  Nakagawa,  Hideki  Murakami,  Seiichiro  Higashi,  Seiichi  Miyazaki
(Hiroshima University, Japan)

17:45  Tue-S7-05

Reliability  of  Ultrathin  High-k  Gate  Dielectrics  Deposited  on  Strained-Si0.91Ge0.09  and  Ge  under Dynamic Stress
Chandreswar  Mahata,  M.  K.  Bera,  C.  K.  Maiti  (Dept.  of  Electronics  and  ECE,  Indian  Institute  of Technology  Kharagpur,  India),  S.  Chatterjee  (South  Dakota  State  University,  Brookings,  South  Dakota 57006  USA,  United  States),  P.K.  Bose  (Mechanical  Engineering  Dept.,  Jadavpur  University,  Jadavpur, Kolkata 700032, India)

Novel and Selective Epitaxy
Chair: Yeo Yee Chia (National University of Singapore, Singapore), Frederik Leys (IMEC, Belgium)

Aspect Ratio Trapping, a New Approach to Heteroepitaxy of Ge and III-Vs on Si
Ji-Soo  Park , J.Bai , J.Z.Li , J.Hydrick , M.Curtin , Z.Cheng,M.Carroll , A.Lochtefeld (AmberWave Systems Corp., USA), Z. Shellenbarger (Sarnoff Corp., USA), M. Dudley (Stony Brook Univ., USA)

Growth Characterization of Ge Nanostructures Selectively Grown on Patterned Si Shih-Chiang Huang, Ming-hsin Cheng, Guang-Li Luo (National Nano Device Laboratories, Taiwan), Wei- Xin Ni (National Nano Device Laboratories, Sweden)

09:45  Wed-S8-033

Si and SiGe Faceting during Selective Epitaxy
Clement Pribat, Linda Depoyan, Nicolas Loubet, Didier Dutartre (STMicroelectronics, France)

10:00  Wed-S8-04

Heavy B Atomic-Layer Doping Characteristics in Si Epitaxial Growth on B Adsorbed Si(100) by Ultraclean Low-Pressure CVD System
Junichi  Murota  (Tohoku  University,  Japan),  Hiroki  Tanno,  Masao  Sakuraba  (Research  Institute  of Electrical Communication, Tohoku University, Japan), Bernd Tillack (IHP, Germany)

10:15  Wed-S8-05

Challenges for Selective Epitaxial Growth of SiCP Using Cl2 Chemistry
Matthias Bauer, Shawn Thomas (ASM America, United States)

Circuits & HBT Devices
Chair: Alain Chantre (ST Microelectronics, France), Chinchun Meng (National Chiao Tung University, Taiwan)

SiGe Technology in Wireless Power Amplifiers
Allen C.M. Chiang (Richwave Technology, Taiwan)

Bias-Offset NMOS/PMOS Cross-Coupled Pair for High Linearity Gilbert Upconversion Mixer
Chinchun Meng, Jin-Siang Syu (National Chiao Tung University, Taiwan), Guo-Wei Huang (National Nano Device Laboratories, Taiwan)

11:35  Wed-S9-03

A Selective Epitaxy Collector Module for High-Speed Si/SiGe:C HBTs
Boris  Geynet,  Boris  Geynet  (STMicroelectronics  /  IEMN,  France),  Pascal Chevalier,  Florence  Brossard, Benoit Vandelle, Thierry Schwartzmann, Michel Buczko, Gregory Avenier, Didier Dutartre, Alain Chantre (STMicroelectronics, France), Gilles Dambrine, Francois Danneville (IEMN, France)

11:50  Wed-S9-04

Emitter-Width-Tolerable SiGe HBT with Bow-Tie-Shaped Base
Katsuyoshi Washio, Hiromi Shimamoto, Katsuya Oda (Central Research Laboratory, Hitachi, Ltd., Japan), Makoto Miura (Renesas Northern Japan Semiconductor, Inc., Japan)

12:05  Wed-S9-05

Fomation of Ultra-Shallow Base with High Boron-Doping Concentration for High-Performance SiGe HBTs
Katsuya  Oda,  Makoto  Miura,  Katsuyoshi  Washio  (Central  Research  Laboratory,  Hitachi  Ltd.,  Japan), Hiromi Shimamoto (Renesas Northern Japan Semiconductor, Inc., Japan)

Nanostructures and Photonics
Chair: John Kouvetakis (Arizona State University, USA)

Self-Assembled C-Ge/Si Nanostructures: Studies of Morphology, Strain, and Intermixing
Maria-Isabel Alonso, A. Bernardi, J.S. Reparaz, P.D. Lacharmoise, I.C. Marcus, A.R. Goni, J.O. Osso, M. Garriga (Institut de Ciencia de Materials de Barcelona, CSIC, Spain)

Prospects  of  Si-based  Opto  Electronics  Exploring  Interband and Intersubband Transitions in Strained Ge/SiGe/Si Quantum Structures
Hans Sigg (Paul Scherrer Institute, Switzerland)

14:30  Wed-S10-03  (Invited)

Optical and ElectricalEevaluations of SiGe Layers on Insulator Fabricated Using Ge Condensation by Dry Oxidation
Hiroshi Nakashima, Dong Eang (Kyushu University, Japan)