March 10, 2008

March 21, 2008

April 21, 2008

June 10, 2008

Alexandra Abbadie (SOITEC, France)
Maria-Isabel Alonso (Institut de Ciencia de Materials de Barcelona, CSIC, Spain)
Francois Andrieu (CEA LETI-MIATEC, France)
Alain Chantre (STMicroelectronics, France )
Allen Chiang (Richwave Technology, Taiwan)
Johan Donkers (NXP, Netherlands)
Leo Gomez (MIT, USA)
Frederik Leys (IMEC, Leuven, Belgium)
Koen Martens (IMEC and KULeuven, ESAT department, Belgium)
Hiroshi Nakashima (Kyushu University, Japan)
Ji-Soo Park (AmberWave Systems Corp., USA)
Thomas Schroeder (IHP, Germany)
Hans Sigg (PSI, Switzerland)
Jose Menendez (Air Force Research Laboratory, USA)
Tatsuya Tominari (Hitachi Ltd., Japan)
Nobuaki Yasutake (Toshiba Corporation, Japan)
Yee-Chia Yeo (National University of Singapore, Singapore)

Course A
1.　Erich Kasper(University of Stuttgart, Germany)
     Short Course Title:High Germanium Content Devices:Structure, Physics,
     Applications

Course B
1.　Frederik Leys(IMEC, Leuven, Belgium)
     Short Course Title:Germanium as a future channel material for pMOSFETs:
     Overview of the critical processing steps influencing Ion and Ioff
2.　Hiroshi Nakashima (Kyushu University, Japan)