Alexandra Abbadie has graduaded in 2000 from the National Superior School of Chemistry of Montpellier (France) with a Master in Organic Chemistry (equivalent of a one year specialization after a Master of Science).She has then performed her PhD at the Laboratory of Electronics and Information Technologies (LETI), in CEA-Grenoble (France), from 2001 to 2004. During this period, she worked on the development of advanced wet cleanings on Si, SiGe and Ge virtual substrates (after Chemical Mechanical Polishing) and for the recycling of copper contaminated Si wafers. Those wet cleanings were transferred to SOITEC and to Picopolish for the reclaim of Si wafers, the production of advanced substrates such as SiGe-On-Insulator wafers, Strained Silicon-On-Insulator etc.. Dr. Abbadie then accepted in 2004 a permanent position in SOITEC, France, where she continued working on those wet cleanings for roughly one year From 2005 to 2008, she has then optimized techniques dedicated to defect preferential etching on a large range of materials, from Si to Ge, on Smart cut wafers and on GaN and InGaN wafers (wet-chemical and gaseous HCl revelation techniques). She has also used her skills in wet-cleaning on those nitride surfaces for the elaboration of (In)GaNOS wafers.Finally, the fruitful and close collaborations she maintains with research organizations such as Frankfort University, CEA-LETI etc, enabled the faster development and understanding of new defect etching methods (leading to numerous publications and patents).Alexandra Abbadie has authored or co-authored more than 25 publications and holds 4 patents. She has also given regular or invited talks in several meetings, symposiums or conferences organized notably by the Electrochemical Society