CURRICULUM VITAE

CONTACT INFORMATION
Name           J.J.T.M. (Johan) Donkers
Title             Ing.
Address                 Kapeldreef 75, B-3001 Leuven, Belgium
Telephone  +32 16 281 628
Email                      johan.donkers@nxp.com

PERSONAL INFORMATION
Date of Birth         15-05-1968
Place of Birth        Helmond
Citizenship  The Netherlands
Sex               Male

EDUCATION
1980 - 1988             MAVO/HAVO/VWO, Helmond
1988 - 1992             Applied Physics, Fontys Hogescholen, Eindhoven

EMPLOYMENT HISTORY
1994-1999    Philips Research, Materials Analysis, Transmission Electron Microscopy
1999-2006    Philips Research, Semiconductor Process Architectures, RF Devices and Technology
2006-present         NXP Semiconductors, Corporate I&T, Research, Silicon Process Options, RF Devices and
Technology

PROFESSIONAL QUALIFICATIONS
Project management
RF Process Technology
Materials Analysis

PUBLICATIONS SILICON TECHNOLOGY
The versatile use of SiGe for high-performance devices, E. Hijzen et al., 214th ECS Meeting, Electrochemical Society, 2008.
Choosing an HBT Architecture for Next Generation SiGe:C BiCMOS (invited), J. Donkers et al., ISTDM 2008.
A Novel Fully Self-Aligned SiGe:C HBT Architecture Featuring a Single Step Epitaxial Collector-Base Process, J. Donkers et al., IEDM, 2007, pp. 655-658.
A Novel Isolation Scheme featuring Cavities in the Collector for a High-Speed 0.13mm SiGe:C BiCMOS Technology, L.J. Choi et al., SiRF, Silicon Monolithic Integrated Circuits in RF Systems, 2007.
On The Delay Times in Vertically Scaled SiGe HBTs, P. Agarwal et al., Proc. BCTM, 2005, pp. 264-267.
SiGe:C HBT technology for advanced BiCMOS processes, P. Magnée et al., GAAS 2004; 12th Gallium Arsenide Compound Semicond. Appl. Symp., Conf. Proc. 243-246, 2004.
Metal Emitter SiGe:C HBTs, J. Donkers et al., IEDM, 2004.
Vertical Profile Optimisation of a Self-Aligned SiGeC HBT Process with an n-Cap Emitter, J. Donkers et al., Proc. BCTM, 2003.
QUBiC4G: A fT/fmax=70/100GHz 0.25um Low Power SiGe-BiCMOS Production Technology with High Quality Passives for 12.5Gb/s Optical Networking and Emerging Wireless Aplications up tp 20GHz, P. Deixler et al., Proc. BCTM, 2002.
Explorations for High Performance SiGe-Heterojunction Bipolar Transistor Integration, P. Deixler et al., Proc. BCTM, 2001, p. 30.