Tatsuya Tominari was born in Gifu, Japan, on July 13, 1973. He received the B.S. and M.S. degrees in electrical and electronic engineering from Ritsumeikan University, Kyoto, Japan, in 1996 and 1998, respectively.In 1998, he joined the Device Development Center (now the Micro Device Division), at Hitachi, Ltd., Tokyo, Japan, and was engaged in lithography process technology for mass production. Since 2001, he has been working on the development of SiGe BiCMOS process and device technologies. Currently, he is an assistant senior engineer in the device technology　department, and in charge of the development of high-speed and high-voltage SiGe (C)BiCMOS technology including a selective SiGe epitaxial technique to perform high-speed LSIs for millimeter-wave applications and high-performance analog products.