Contributed papers are solicited in the following technical areas:
1.Device-related materials:
Wafer fabrication (virtual substrates, SOI, SGOI, GOI, etc.), strain adjustment and strain relaxation methods, defect engineering and characterization, layer transfer, selective growth, novel group-IV alloys and heterostructures.
2.Process Technology:
Cleaning and treatment of SiGe(C) surfaces, epitaxy, elevated S/D contacts, SiGe gate materials, gate dielectrics on SiGe and Ge, dopant diffusion and point defects, dry etching, contact technology, process and impurity control, tooling, economics of manufacturing, process integration, local and global strain, TCAD.
3.Devices:
Hetero-CMOS, strained MOS, HBTs, BiCMOS, MODFETs, photonics devices, IR devices, tunneling, coherent and quantum devices, high-speed and THz devices, germanium devices, MEMS, thermo-electric devices, noveldevices, device modeling.
4.Circuits / Applications:
Digital logic, VLSI, MMICs, SOCs, amplifiers, mixers, wireless and fiber-optic interfaces, analog / mixed signal systems and subsystems, communications systems, components for optical communication, imaging, sensing and radar systems, emerging and novel applications.
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