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個人著作：(點擊以展開)
- 期刊論文
- Liu CK, Yu CK, Chien HC, Kuo SL, Hsu CY, Dai MJ, Luo GL, Huang SC, and Huang MJ , “Thermal conductivity of Si/SiGe superlattice films”, JOURNAL OF APPLIED PHYSICS, 104 (7): 114301, 2008
- Cheng CC, Chien CH, Luo GL, Liu JC, Kei CC, Liu DR, Hsiao CN, Yang CH, Chang CY, “Characteristics of atomic-layer-deposited Al2O3 high-k dielectric films grown on Ge substrates”, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 155 (10): G203-G208 , 2008
- Cheng MH, Ni WX, Luo GL, Huang SC, Chang JJ, Lee CY, “Growth and characterization of Ge nanostructures selectively grown on patterned Si”, Thin Solid Films, 517(1): 57, 2008.
- Cheng CC, Chien CH, Luo GL, Yang CH, Chang CC, Chang CY, Kei CC, Hsiao CN, Perng
TP, “Effects of interfacial sulfidization and thermal annealing on the electrical
properties of an atomic-layer-deposited Al2O3 gate dielectric on GaAs substrate”,
JOURNAL OF APPLIED PHYSICS, 103 (7): 074102, 2008
- Cheng CC, Chien CH, Luo GL, Tseng CK, Chiang HC, Yang CH, Chang CY , “Improved electrical
properties of Gd2O3/GaAs capacitor with modified wet-chemical clean and sulfidization
procedures”, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 155 (3): G56-G60 , 2008
- Cheng CC, Chien CH, Luo GL, Yang CH, Kuo ML, Lin JH, Tseng CK, Chang CY, “Study
of thermal stability of HfOxNy/Ge capacitors using postdeposition annealing and
NH3 plasma pretreatment”, JOURNAL OF THE ELECTROCHEMICAL SOCIETY 154 (7): G155-G159
2007
- Lai SC, Lue HT, Hsieh JY, Yang MJ, Chiou Y, Wu CW, Wu TB, Luo GL, Chien CH, Lai
EK, Hsieh KY, Liu R, Lu CY, “Study of the erase mechanism of MANOS (Metal/Al2O3/SiN/SiO2/Si)
device”, IEEE ELECTRON DEVICE LETTERS 28 (7): 643-645 JUL 2007
- Yang MJ, Chien CH, Lu YH, Luo GL, Chiu SC, Lou CC, Huang TY, “High-performance and
low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate
gate dielectric”, IEEE ELECTRON DEVICE LETTERS 28 (10): 902-904 OCT 2007
- Luo GL, Hsieh YC, Chang EY et al. “High-speed GaAs metal gate semiconductor field
effect transistor structure grown on a composite Ge/GexSi1?x/Si substrate”, JOURNAL
OF APPLIED PHYSICS, 101, 084501 2007.
- Cheng CC, Chien CH, Luo GL, et al. “Study of Thermal Stability of HfOxNy/Ge Capacitors
Using Post-deposition Annealing and NH3 Plasma Pretreatment”, JOURNAL OF THE ELECTROCHEMICAL
SOCIETY, 154 (6): (2007)
- Hsieh YC, Chang EY, Luo GL, et al. “Use of Si+ pre-ion-implantation on Si substrate
to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the
growth of Ge layer on Si substrate”, APPLIED PHYSICS LETTERS, 90 (8): Art. No. 083507
2007
- Cheng CC, Chien CH, Luo GL, et al. “Ultrathin Si capping layer suppresses charge
trapping in HfOxNy/Ge metal-insulator-semiconductor capacitors”, APPLIED PHYSICS
LETTERS, 90 (1): Art. No. 012905, 2007
- Ferng SS, Yang TH, Luo GL, et al. “Growth behaviour of Ge nano-islands on the nanosized
Si{111} facets bordering on two {100} planes” NANOTECHNOLOGY, 17 (20): 5207-5211,
2006
- Hsieh YC, Chang EY, Luo GL, et al. “Self-assembled In0.22Ga0.78As quantum dots grown
on metamorphic GaAs/Ge/SixGe1-x/Si substrate”, JOURNAL OF APPLIED PHYSICS, 100 (6):
Art. No. 064502, 2006
- Cheng CC, Chien CH, Lin JH, Chang CY, Luo GL et al. “Thermochemical reaction of
ZrOx(N-y) interfaces on Ge and Si substrates”, APPLIED PHYSICS LETTERS, 89 (1):
Art. No. 012905, 2006
- Ku JT, Kuo MC, Shen JL, Chiu KC, Yang TH, Luo GL et al. “Optical characterization
of ZnSe epilayers and ZnCdSe/ZnSe quantum wells grown on Ge/Ge0.95Si0.05/Ge0.9Si0.1/Si
virtual substrates”, JOURNAL OF APPLIED PHYSICS, 99 (6): Art. No. 063506, 2006
- Hsieh YC, Chang EY, Yeh SS, Chang CW, Luo GL et al. “Optimization of the growth
of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device application”, JOURNAL
OF CRYSTAL GROWTH, 289 (1): 96-101, 2006
- Luo GL, Cheng CC, Huang CY, et al. “Suppressing phosphorus diffusion in germanium
by carbon incorporation”, ELECTRONICS LETTERS, 41 (24): 1354-1355, 2005
- Chang EY, Yang TH, Luo GL, et al. “A GeSi-buffer structure for growth of high-quality
GaAs epitaxial layers on a Si substrate”, JOURNAL OF ELECTRONIC MATERIALS, 34 (1):
23-26, 2005
- Yang TH, Luo GL, Chang EY, et al. “Interface-blocking mechanism for reduction of
threading dislocations in SiGe and Ge epitaxial layers on Si(100) substrates”, JOURNAL
OF VACUUM SCIENCE & TECHNOLOGY, B 22 (5): L17-L19, 2004
- Yang TH, Yang CS, Luo GL, et al. “Growth of ZnSe epilayer on Si using Ge/GexSi1-x
buffer structure”, JAPANESE JOURNAL OF APPLIED PHYSICS, 43 (6B): L811-L813, 2004
- Lee HM, Yang TH, Luo GL, et al. “Controlled placement of self-organized Ge dots
on patterned Si (001) surfaces”, JAPANESE JOURNAL OF APPLIED PHYSICS, 43 (2B): L247-L249,
2004
- Yang TH, Luo GL, Chang EY, et al. “Study of nickel silicide contact on Si/Si1-xGex”,
IEEE ELECTRON DEVICE LETTERS, 24 (9): 544-546, 2003
- Lee HM, Yang TH, Luo GL, et al., “Flower-like distributed self-organized Ge dots
on patterned Si (001) substrates”, JAPANESE JOURNAL OF APPLIED PHYSICS, 42 (6B):
L718-L720, 2003
- Luo GL, Yang TH, Chang EY, et al. “Growth of high-quality Ge epitaxial layers on
Si(100)”, JAPANESE JOURNAL OF APPLIED PHYSICS, 42 (5B): L517-L519, 2003
- 會議論文
- 羅廣禮, 張翼, 楊宗?, 張俊彥, “在矽基板上成長高品質鍺薄膜”, 中華民國專利, No: I221009
- Chang EY, Luo GL, Yang TH, Chang CY, “Growth of high-quality of GaAs on Si by using
a novel SiGe buffer”, US patent: 7259084; 中華民國專利, No: I221001;
- Yang TH, Luo GL, Chang CY, “Novel technique to grow high quality ZnSe epitaxy layer
on Si substrate”, US Patent, No. 7071087; 中華民國專利, No: I246116.
- 羅廣禮, 簡昭欣, “以[110]單軸拉伸應變提升電子遷移率之Ge nMOSFET構造”, 中華民國專利, No.200711076
- 專書論文
- 專利
- 羅廣禮, 張翼, 楊宗(火喜), 張俊彥, “在矽基板上成長高品質鍺薄膜”, 中華民國專利, No: I221009
- Chang EY, Luo GL, Yang TH, Chang CY, “Growth of high-quality of GaAs on Si by using a novel SiGe buffer”, US patent: 7259084; 中華民國專利, No: I221001
- Yang TH, Luo GL, Chang CY, “Novel technique to grow high quality ZnSe epitaxy layer on Si substrate”, US Patent, No. 7071087; 中華民國專利, No: I246116.
- 羅廣禮, 簡昭欣, “以[110]單軸拉伸應變提升電子遷移率之Ge nMOSFET構造”,中華民國專利, No. I290360
- 羅廣禮,“在矽（１１０）基板上設有壓縮應變矽鍺通道之Ｎ型金氧半電晶體架構”,中華民國專利, No. I303879
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