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• 期刊論文
1. Yao-Jen Lee, Pei-Tsang Ho, Wen-Luh Yang, Tien-Sheng Chao, and Tiao-Yuan Huang, “Crystal Orientation and nitrogen effects on the carrier mobility of p type metal oxide semiconductor field effect transistor with ultra thin gate dielectric, “ Japanese Journal of Applied Physics, vol. 45, 2006, pp.1520~1524
2. Yao-Jen Lee, Tien-Sheng Chao, and Tiao-Yuan Huang, “ The effects of dielectric type and thickness on the characteristics of dynamic threshold metal oxide semiconductor transistor” Jpn. J. Appl. Phys, vol. 42, pp.5045-5049, 2003
3. Yao-Jen Lee, Bo-An Tsai, Hsin-Yi Peng, Charles Pei-Jer Tzeng, Chih-wei Luo, Kuei-Shu Chang-Liao,” Reduced Interfacial Layer Thickness and Gate Leakage Current of ALD Grown HfAlO with TaN Gates using Chemical Oxides and Spike-Annealing,” Japanese Journal of Applied Physics, vol. 47, 2008, pp.2438~2441
4. Chun-Chien Tsai, Yao-Jen Lee, Ko-Yu Chiang, Jyh-Liang Wang, I-Che Lee, Hsu-Hsin Chen, Kai-Fang Wei, Ting-Kuo Chang, Bo-Ting Chen, and Huang-Chung Cheng,” Polycrystalline Silicon Thin Film Transistors with location-controlled crystal grains fabricated by excimer laser crystallization,” APPLIED PHYSICS LETTERS 91, 201903 (2007)
5. Chun-Chien Tsai, Kai-Fang Wei, Yao-Jen Lee, Hsu-Hsin Chen, Jyh-Liang Wang, I-Che Lee, and Huang-Chung Cheng,” High-Performance Short-Channel Double-Gate Low-Temperature Polysilicon Thin-Film Transistors Using Excimer Laser Crystallization,” IEEE ELECTRON DEVICE LETTERS, VOL. 28, NO. 11, NOVEMBER, pp. 1010-1013, 2007
6. Ching-Sen Lu, Horng-Chih Lin, Jian-Ming Huang, and Yao-Jen Lee,” Impacts of a polycrystalline-silicon buffer layer on the performance and reliability of strained n-channel metal-oxide-semiconductor field-effect transistors with SiN capping,” Appl. Phys. Lett. 90, 122110 (2007)
7. Chia-Yu Lu, Horng-Chih Lin, Yao-Jen Lee, Yu-Lin Shie, and Chih-Cheng Chao, “ Impacts of SiN-Capping Layer on the Device Characteristic and Hot-Carrier Degradation of nMOSFETs, “ TEEE TDMR vol. 7, no.1, March 2007
8. Ching-Sen Lu, Horng-Chih Lin, Jian-Ming Huang, Yao-Jen Lee, and Tiao-Yuan Huang, "Impacts of a Poly-Si Buffer Layer on the Performance and Reliability of Strained-channel NMOSFETs with SiN capping," Appl. Phys. Lett. 90, 122110 (2007)
9. W. C. Lo, Y. H. Kuo, Y. J. Lee, T.S. Chao, C. Y. Chang,” Mobility Enhancement in Local Strained Channel nMOSFETs on (111) Substrate,” Japanese Journal of Applied Physics, Volume 46, Issue 9A, pp. 5715 (2007).
10. Yu-Ting Lin, Chih Chen, Jia-Min Shieh, Yao-Jen Lee, Ci-Ling Pan, Ching-Wei Cheng, Jian-Ten Peng, and Chih-Wei Chao, “Trap-state density in continuous-wave laser-crystallized single-grainlike silicon transistors,” Appl. Phys. Lett. 88, 233511 (2006)
11. Chia-Yu Lu, Horng-Chih Lin, Yao-Jen Lee, Yu-Lin Shie, and Chih-Cheng Chao, “Impacts of SiN-Capping Layer on the Device Characteristics and Hot Carrier Degradation of NMOSFETs,” IEEE Transactions on Device and Materials Reliability 2007.
12. Chun-Chien Tsai, Hsu-Hsin Chen, Yao-Jen Lee, Bo-Ting Chen, and Huang-Chung Cheng,” High-Performance Low Temperature Poly-Silicon Thin Film Transistors Fabricated by Excimer Laser Irradiation with Bottom-Gate Scheme,” ECS Trans. 3, (8) 143 (2006)
13. Tien-Sheng Chao, Yao-Jen Lee, and Tiao-Yuan Huang, “ High voltage and high temperature application of DTMOS with reverse schottky barrier on substrate contacts,’ IEEE ELECTRON DEVICE LETTERS, VOL. 25, pp. 86-88, 2004
14. Tien-Sheng Chao, Yao-Jen Lee, Chun-Yang Huang, Horng-Chih Lin, Yiming Li and Tiao-Yuan Huang, “ Temperature dependence of threshold voltage and hot carrier degradation of dynamic threshold SOI-pMOSFETs” Jpn. J. Appl. Phys, vol. 43, pp.1300-1304, 2004
15. Y. H. Lin, C. H. CHien, C. T. Lin, C. Y. Chang and T. F. Lei, “High Performance Nonvolatile HfO2 Nanocrystal Memory”, IEEE Electr. Dev. Lett. Vol.26, No. 3, pp.154, Mar. 2005
16. Liu CK, Yu CK, Chien HC, Kuo SL, Hsu CY, Dai MJ, Luo GL, Huang SC, and Huang MJ , “Thermal conductivity of Si/SiGe superlattice films”, JOURNAL OF APPLIED PHYSICS, 104 (7): 114301, 2008
17. Cheng CC, Chien CH, Luo GL, Liu JC, Kei CC, Liu DR, Hsiao CN, Yang CH, Chang CY, “Characteristics of atomic-layer-deposited Al2O3 high-k dielectric films grown on Ge substrates”, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 155 (10): G203-G208 , 2008
18. Cheng MH, Ni WX, Luo GL, Huang SC, Chang JJ, Lee CY, “Growth and characterization of Ge nanostructures selectively grown on patterned Si”, Thin Solid Films, 517(1): 57, 2008.
19. Cheng CC, Chien CH, Luo GL, Yang CH, Chang CC, Chang CY, Kei CC, Hsiao CN, Perng TP, “Effects of interfacial sulfidization and thermal annealing on the electrical properties of an atomic-layer-deposited Al2O3 gate dielectric on GaAs substrate”, JOURNAL OF APPLIED PHYSICS, 103 (7): 074102, 2008
20. Cheng CC, Chien CH, Luo GL, Tseng CK, Chiang HC, Yang CH, Chang CY , “Improved electrical properties of Gd2O3/GaAs capacitor with modified wet-chemical clean and sulfidization procedures”, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 155 (3): G56-G60 , 2008
21. Cheng CC, Chien CH, Luo GL, Yang CH, Kuo ML, Lin JH, Tseng CK, Chang CY, “Study of thermal stability of HfOxNy/Ge capacitors using postdeposition annealing and NH3 plasma pretreatment”, JOURNAL OF THE ELECTROCHEMICAL SOCIETY 154 (7): G155-G159 2007
22. Lai SC, Lue HT, Hsieh JY, Yang MJ, Chiou Y, Wu CW, Wu TB, Luo GL, Chien CH, Lai EK, Hsieh KY, Liu R, Lu CY, “Study of the erase mechanism of MANOS (Metal/Al2O3/SiN/SiO2/Si) device”, IEEE ELECTRON DEVICE LETTERS 28 (7): 643-645 JUL 2007
23. Yang MJ, Chien CH, Lu YH, Luo GL, Chiu SC, Lou CC, Huang TY, “High-performance and low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate gate dielectric”, IEEE ELECTRON DEVICE LETTERS 28 (10): 902-904 OCT 2007
24. Luo GL, Hsieh YC, Chang EY et al. “High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge/GexSi1?x/Si substrate”, JOURNAL OF APPLIED PHYSICS, 101, 084501 2007.
25. Cheng CC, Chien CH, Luo GL, et al. “Study of Thermal Stability of HfOxNy/Ge Capacitors Using Post-deposition Annealing and NH3 Plasma Pretreatment”, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 154 (6): (2007)
26. Hsieh YC, Chang EY, Luo GL, et al. “Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrate”, APPLIED PHYSICS LETTERS, 90 (8): Art. No. 083507 2007
27. Cheng CC, Chien CH, Luo GL, et al. “Ultrathin Si capping layer suppresses charge trapping in HfOxNy/Ge metal-insulator-semiconductor capacitors”, APPLIED PHYSICS LETTERS, 90 (1): Art. No. 012905, 2007
28. Ferng SS, Yang TH, Luo GL, et al. “Growth behaviour of Ge nano-islands on the nanosized Si{111} facets bordering on two {100} planes” NANOTECHNOLOGY, 17 (20): 5207-5211, 2006
29. Hsieh YC, Chang EY, Luo GL, et al. “Self-assembled In0.22Ga0.78As quantum dots grown on metamorphic GaAs/Ge/SixGe1-x/Si substrate”, JOURNAL OF APPLIED PHYSICS, 100 (6): Art. No. 064502, 2006
30. Cheng CC, Chien CH, Lin JH, Chang CY, Luo GL et al. “Thermochemical reaction of ZrOx(N-y) interfaces on Ge and Si substrates”, APPLIED PHYSICS LETTERS, 89 (1): Art. No. 012905, 2006
31. Ku JT, Kuo MC, Shen JL, Chiu KC, Yang TH, Luo GL et al. “Optical characterization of ZnSe epilayers and ZnCdSe/ZnSe quantum wells grown on Ge/Ge0.95Si0.05/Ge0.9Si0.1/Si virtual substrates”, JOURNAL OF APPLIED PHYSICS, 99 (6): Art. No. 063506, 2006
32. Hsieh YC, Chang EY, Yeh SS, Chang CW, Luo GL et al. “Optimization of the growth of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device application”, JOURNAL OF CRYSTAL GROWTH, 289 (1): 96-101, 2006
33. Luo GL, Cheng CC, Huang CY, et al. “Suppressing phosphorus diffusion in germanium by carbon incorporation”, ELECTRONICS LETTERS, 41 (24): 1354-1355, 2005
34. Chang EY, Yang TH, Luo GL, et al. “A GeSi-buffer structure for growth of high-quality GaAs epitaxial layers on a Si substrate”, JOURNAL OF ELECTRONIC MATERIALS, 34 (1): 23-26, 2005
35. Yang TH, Luo GL, Chang EY, et al. “Interface-blocking mechanism for reduction of threading dislocations in SiGe and Ge epitaxial layers on Si(100) substrates”, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, B 22 (5): L17-L19, 2004
36. Yang TH, Yang CS, Luo GL, et al. “Growth of ZnSe epilayer on Si using Ge/GexSi1-x buffer structure”, JAPANESE JOURNAL OF APPLIED PHYSICS, 43 (6B): L811-L813, 2004
37. Lee HM, Yang TH, Luo GL, et al. “Controlled placement of self-organized Ge dots on patterned Si (001) surfaces”, JAPANESE JOURNAL OF APPLIED PHYSICS, 43 (2B): L247-L249, 2004
38. Yang TH, Luo GL, Chang EY, et al. “Study of nickel silicide contact on Si/Si1-xGex”, IEEE ELECTRON DEVICE LETTERS, 24 (9): 544-546, 2003
39. Lee HM, Yang TH, Luo GL, et al., “Flower-like distributed self-organized Ge dots on patterned Si (001) substrates”, JAPANESE JOURNAL OF APPLIED PHYSICS, 42 (6B): L718-L720, 2003
40. Luo GL, Yang TH, Chang EY, et al. “Growth of high-quality Ge epitaxial layers on Si(100)”, JAPANESE JOURNAL OF APPLIED PHYSICS, 42 (5B): L517-L519, 2003
41. H. L. Chen, K. C. Hsieh, C. H. Lin and S. H. Chen, “Using direct nanoimprinting of ferroelectric films to prepare devices exhibiting bi-directionally tunable surface plasmon resonances”, Nanotechnology 19, 435304, 2008
42. L. H. Chu, E. Y. Chang, L. Chang, Y. H. Wu, S. H. Chen, H. T. Hsu, T. L. Lee, Y. C. Lien , C. Y. Chang, “Effect of gate sinking on the device performance of the InGaP/AlGaAs/InGaAs Enhancemnet-mode PHEMT”, IEEE Electron Device Lett., vol. 28, Feb., pp. 82-85, 2007.
43. Y. C. Wu, E. Y. Chang, H. T. Hsu, S. H. Chen, W. C. Wu and L. H. Chu, "SPDT GaAs Switches with Copper Metallized Interconnects", IEEE Microwave and Wireless Components Letters, Vol. 17, No. 1, Jan. 2007.
44. Yi-Chung Lien, Szu-Hung Chen, Edward Yi Chang, Ching-Ting Lee, Li-Hsin Chu, and Chia-Yuan Chang, “Fabrication of 0.15-μm Γ-Shaped Gate In0.52Al0.48As/In0.6Ga0.4As Metamorphic HEMTs Using DUV Lithography and Tilt Dry-Etching Technique,” IEEE Electron Device Lett., vol. 28, Feb., pp. 93-95, 2007.
45. Han-Ching Lin, Shiao-Wei Kuo, Chih-Feng Huang, and Feng-Chih Chang. “Thermal and Surface Properties of Phenolic Nanocomposites containing Octaphenol Polyhedral Oligomeric Silsesquioxane” Macromol. Rapid Commun. 2006, 27, 537
46. Shiao-Wei Kuo, Han-Ching Lin, Wu-Jang Huang, Chih-Feng Huang, and Feng-Chih Chang. “Hydrogen Bonding Interactions and Miscibility Between Phenolic Resin and Octa(acetoxystyryl) Polyhedral Oligomeric Silsesquioxane (AS-POSS) Nanocomposites” J. Polym. Sci.: Pol. Phys. 2006, 44, 673
47. Chih-Feng Huang, Shiao-Wei Kuo, Han-Ching Lin, Jem-Kun Chen, Yu-Kai Chen, Hongyao Xu, and Feng-Chih Chang. “Thermal properties, miscibility and specific interactions in comparison of linear and star poly(methyl methacrylate) blend with phenolic” Polymer 2004, 45, 5913.
48. Han-Ching Lin, Shiao-Wei Kuo, Chih-Feng Huang, and Feng-Chih Chang. “Thermal and Surface Properties of Phenolic Nanocomposites containing Octaphenol Polyhedral Oligomeric Silsesquioxane” Macromol. Rapid Commun. 2006, 27, 537.
49. Shiao-Wei Kuo, Han-Ching Lin, Wu-Jang Huang, Chih-Feng Huang, and Feng-Chih Chang. “Hydrogen Bonding Interactions and Miscibility Between Phenolic Resin and Octa(acetoxystyryl) Polyhedral Oligomeric Silsesquioxane (AS-POSS) Nanocomposites” J. Polym. Sci.: Pol. Phys. 2006, 44, 673.
50. Chih-Feng Wang, Shih-Feng Chiou, Fu-Hsiang Ko, Cheng-Tung Chou, Han-Ching Lin, Chih-Feng Huang, and Feng-Chih Chang. “Fabrication of Biomimetic Super-Amphiphobic Surfaces Through Plasma Modification of Benzoxazine Films” Macromol. Rapid Commun. 2006, 27, 333.
51. Han-Ching Lin, Chih-Feng Wang, Shiao-Wei Kuo, Pao-Hsiang Tung, Chun-Hung Lin, and Feng-Chih Chang. “Intermolecular Hydrogen Bonding Effect on Low-Surface-Energy Material of Poly(vinyl phenol)” J. Phys. Chem. B. 2007, 111, 3404.
52. Han-Ching Lin, Chih-Feng Wang, Chun-Hung Lin, and Feng-Chih Chang. “Reversible Wettability of a Polybenzoxazine-Silica Hybrid Surface between Superhydrophobicity and Hydrophilicity” submitted.
53. W. H. Lai, M. H. Hon, L. G. Teoh, Y. H. Su, J. Shieh, C. K. Chen, 2008/8 “Field-Emission Performance of Wormhole-Like Mesoporous Tungsten Oxide Nanowires” J. of Electronic Materials 37, 1082-1087 SCI/2007: 1.320, EI
54. K. C. Hsieh, Hsuen-Li Chen, D. H. Wan, J. Shieh, 2008/3 "Active modulation of surface plasmon resonance wavelengths by applying an electric field to gold nanoparticle-embedded ferroelectric films" J. of Physical Chemistry C 112, 11673-11678.
55. T. S. Ko, J. Shieh, M. C. Yang, T. C. Lu, H. C. Kuo, S. C. Wang, 2008/3 “Phase transformation and optical characteristics of porous germanium thin film” Thin Solid Films 516, 2934-2938 SCI /2007: 1.693, EI
56. Wei Hao Lai, Lay Gaik Teoh, Yen Hsun Su, Jiann Shieh, and Min Hsiung Hon, 2007/12 “Effect of Calcination on Crystallinity for Nanostructured Development of Wormhole-Like Mesoporous Tungsten Oxide”, J. the American Ceramic Society 90, 4073-4075 SCI/2007: 1.792, EI
57. W.H. Lai, L.G. Teoh, Y.H. Su, J. Shieh, M.H. Hon, 2007/7 ”Hydrolysis reaction on the characterization of wormhole-like mesoporous tungsten oxide” Journal of Alloys and Compounds 438, 247-252. SCI/2007: 1.455, EI
58. (invited) J. Shieh,* C. H. Lin, M. C. Yang, 2007/4 “Plasma Nanofabrications and Antireflection Applications” J. Phys. D: Applied Physics 40, 2242-2246 SCI/2007: 2.200, EI
59. T. C. Cheng, J. Shieh, W. J. Huang, M. C. Yang, M. H. Cheng, H. M. Lin, and M. N. Chang, 2006/6 “Hydrogen plasma dry etching method for field emission application” Appl. Phys. Lett. 88, 263118. SCI/2007: 3.596, EI
60. Wei Hao Lai, Jiann Shieh, Lay Gaik Teoh, Min Hsiung Hon, 2006/1, “Fabrication of one-dimensional mesoporous tungsten oxide” Nanotechnology 17, 110 SCI/2007: 3.310, EI
61. Ming-Che Yang, Jiann Shieh,* Chiung-Chih Hsu, Tsung-Chieh Cheng, 2005/10, “Well-aligned Silicon Nanograss Fabricated by Hydrogen Plasma Dry Etching”, Electrochem. Solid-State Lett. 8, C131-133. SCI/2007: 2.109, EI
62. Ming-Che Yang, Jiann Shieh,* Tsung-Shine Ko, Hsuen-Li Chen, and Tieh-Chi Chu, 2005/7, “Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS mechanism”, Jap. J. Appl. Phys. 44, 5791-5794 SCI/2007: 1.247, EI
63. An-Thung Cho, Jia-Min Shieh, Jiann Shieh, Yi-Fan Lai, Bau-Tong Dai, Fu-Ming Pan, Hao-Chung Kuo, Yong-Chang Lin, Kuei-Jung Chao, and Pang-Hung Liu, 2005/6, “Emission of Bright Blue Light from Mesoporous Silica with Dense Si (Ge) Nanocrystals”, Electrochem. Solid-State Lett. 8, G143-146. SCI/2007: 2.109, EI
64. Ming-Jui Yang, Jiann Shieh, Shih-Lu Hsu, Ing-Jye Huang, Ching-Chich Leu, Shih-Wen Shen, Tiao-Yuan Huang, Peer Lehnen, and Chao-Hsin Chien, 2005/5, “Low-Temperature Growth of Polycrystalline Ge Films on SiO2 Substrate by HDPCVD”, Electrochem. Solid-State Lett. 8, C74-76. SCI/2007: 2.109, EI
65. W. H. Lai, J. Shieh, L. G. Teoh, I. M. Hung, C. S. Liao, M. H. Hon, 2005/6, ”Effect of copolymer and additive concentrations on the behaviors of mesoporous tungsten oxide”, J of Alloys and Compounds 396, 295-301. SCI/2007: 1.455, EI
66. L. G. Teoh, J. Shieh, W. H. Lai, I. M. Hung, M. H. Hon, 2005/6, “Structure and Optical Properties of Mesoporous Tungsten Oxide”, J of Alloys and Compounds 396, 251-254. SCI/2007: 1.455, EI
67. J. Shieh* and M.H. Hon, 2005/1 “Observation of plastic deformation in TiAlCN/a-C ceramic nanocomposite coating”, Applied Physics A 80, 131-134. SCI/2007: 1.857, EI
68. Jiann Shieh,* Tsung Shine Ko, Hsuen Li Chen, Bau Tong Dai, and Tieh Chi Chu, 2004/10 “Low-temperature growth of germanium quantum dots on silicon oxide by inductively coupled plasma chemical vapor deposition”, Chemical Vapor Deposition 10, 265-269. SCI/2007: 1.936, EI
69. Lay Gaik Teoh, Jiann Shieh, Wei Hao Lai, Min Hsiung Hon, 2004/9 “Effects of Mesoporous Structure on Grain Growth of Nanostructured Tungsten Oxide”, J. Materials Research 19, 2687-2693. SCI/2007: 1.916, EI
70. Jiann Shieh,* Hsuen Li Chen, Tsung Shine Ko, Hsu Chun Cheng, and Tieh Chi Chu, 2004/7, “Nanoparticle-Assisted Growth of Porous Germanium Thin Film”, Advanced Materials 16, 1121-1124. SCI/2007: 8.191, EI
71. L.G. Teoh, I.M. Hung, J. Shieh, W.H. Lai, and M.H. Hon, 2003/11 “Sensitivity properties of a novel NO2 gas sensor based on mesoporous WO3 thin film”, Sensors and Actuators B 96, 219-225. SCI/2007: 2.934, EI
72. L.G. Teoh, I.M. Hung, J. Shieh, W.H. Lai, and M.H. Hon, 2003/8 “High Sensitivity Semiconductor NO2 Gas Sensor Based on Mesoporous WO3 Thin Film” Electrochem. Solid-State Lett. 6, G108-111. SCI/2007: 2.109, EI
73. J. Shieh,* H. M. Feng, M. H. Hon, and H. Y. Juang, 2002/8 “WO3 and W-Ti-O thin-film gas sensors prepared by sol-gel dip-coating”, Sensors and Actuators B 86, 75-80. SCI/2007: 2.934, EI
74. Jiann Shieh,* Hsiao Lei Wang, Ming Shyong Tsai, and Min Hsiung Hon, 2002/3 “Effects of Coffee-bean-like Morphology and Graded Interlayer on Texture Evolution of PECVD-deposited Titanium Carbonitride Films”, J. the American Ceramic Society 85, 636-640. SCI/2007: 1.792, EI
75. Jiann Shieh* and Min Hsiung Hon, 2002/1, “Plasma enhanced chemical vapor deposition of titanium aluminum carbonitride/amorphous-carbon nanocomposite thin films”, J. Vacuum Science Technology A 20, 87-92. SCI/2007: 1.278, EI
76. J. Shieh* and M. H. Hon, 2001/7, “Nanostructure and hardness of titanium aluminum nitride prepared by plasma enhanced chemical vapor deposition”, Thin Solid Films 391, 101-108. SCI /2007: 1.693, EI
77. Jyh-Hua Ting, Ching-Chou Chang, Shaun-Laing Chen, Duan-Shaw Lu, Chung-Yuan Kung, Fuang-Yuan Huang, “Optimization of Field Emission Properties of Carbon Nanotubes by Taguchi Method”, Thin Solid Films Vol. 496 Issue 2, Feb. 2006, pp. 299-305.
78. Jyh-Hua Ting, Tsung-Lung Li, Ying-Chi Hong, “Dependence of field emission properties of carbon nanotube films on their graphitization”, Journal of Vacuum Science and Technology B, Vol. 24 No. 4, Jul/Aug 2006, pp. 1794-1798
79. Jyh-Hua Ting, Chin-Yan Su, Fuang-Yuan Huang, Cho-Lun Hsu, Seiji Samukawa, “Effects of plasma power and plasma sheath on Field Emission Properties of Carbon Nanotubes”, Japanese Journal of Applied Physics, Vol. 45, No. 10B, 2006, pp. 8406-8411.
80. Ming-Yen Lu, Jinhui Song, Ming-Pei Lu, Chung-Yang Lee, Lih-Juann Chen, Zhong Lin Wang, “ZnO-ZnS Heterojunction and ZnS Nanowire Arrays for Electricity Generation” ACS Nano, 3, pp 357 – 362, 2009.
81. Ming-Pei Lu, Jinhui Song, Ming-Yen Lu, Min-Teng Chen, Yifan Gao, Lih-Juann Chen and Zhong Lin Wang, “Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays ” Nano Lett., 9 (3), pp 1223–1227, 2009.
82. Chung-Yang Lee, Ming-Pei Lu, Kao-Feng Liao, Wei-Fan Lee, Chi-Te Huang, Sheng-Yu Chen and Lih-Juann Chen, “Free-Standing Single-Crystal NiSi2 Nanowires with Excellent Electrical Transport and Field Emission Properties” J. Phys. Chem. C, 113 (6), pp 2286–2289, 2009.
83. Chung-Yang Lee, Ming-Pei Lu, Kao-Feng Liao, Wen-Wei Wu, and Lih-Juann Chen, “Vertically well-aligned epitaxial Ni31Si12 nanowire arrays with excellent field emission properties” Appl. Phys. Lett. 93, 113109, 2008.
84. Ming-Jer Chen, Chien-Chih Lee, and Ming-Pei Lu, “Probing a nonuniform two-dimensional electron gas with random telegraph signals” J. Appl. Phys., vol. 103, 034511, 2008.
85. M. P. Lu, W. C. Lee, and M. J. Chen, “Channel-width dependence of low-frequency noise in process tensile-strained n-channel metal-oxide-semiconductor transistors” Applied Physics Letters, vol. 88, 063511, 2006.
86. M. P. Lu, C. Y. Hsiao, P. Y. Lo, J. H. Wei, Y. S. Yang, and M. J. Chen, “Semiconducting single- walled carbon nanotubes exposed to distilled water and aqueous solution: Electrical measurement and theoretical calculation” Applied Physics Letters, vol. 88, 053114, 2006; Selected Articles in Virtual Journal of Nanoscale Science & Technology, Vol. 13, Issue 6, 2006; Selected Articles in Virtual Journal of Biological Physics Research, Vol. 11, Issue 4, 2006.
87. Ming- Pei Lu and Ming-Jer Chen, “Oxide-trap-enhanced Coulomb energy in a metal-oxide-semiconductor system” Physical Review B, vol. 72, 235417, 2005.
88. Ming-Jer Chen and Ming-Pei Lu, “On-off switching of edge direct tunneling currents in metal-oxide- semiconductor field-effect transistors” Applied Physics Letters, vol. 81, 3488, 2002
89. Ching-Chich Leu, Hung-Tao Lin, Chen-Ti Hu, Chao-Hsin Chien, Ming-Jui Yang, Ming-Che Yang, and Tiao-Yuan Huang, “Effects of titanium and tantalum adhesion layers on the properties of sol-gel derived SrBi2Ta2O9 thin films”, Journal of Applied Physics, Vol. 92, No. 3, pp. 1511-1517, Aug. 2002.
90. Ching-Wei Chen, Chao-Hsin Chien, Tsu-Hsiu Preng, Ming-Jui Yang, Jann-Shyang Liang, Peer Lehnen, Bing-Yue Tsui and Chun-Yen Chang, “Electrical Characteristics of Thin HfO2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments”, Japanese Journal of Applied Physics, Vol. 44, No. 1A, pp. 87-93, Jan. 2005.
91. Wen-Tai Lu, Chao-Hsin Chien, Ing-Jye Huang, Ming-Jui Yang, Peer Lehnen, and Tiao-Yuan Huang, “Effects of Low-temperature NH3 Treatment on the Characteristics of HfO2/SiO2 Gate Stack”, Journal of The Electrochemical Society, Vol. 152, No. 11, pp. G799-G803, Sep. 2005.
92. Wen-Tai Lu, Chao-Hsin Chien, Wen-Ting Lan, Tsung-Chieh Lee, Ming-Jui Yang, Shih-Wen Shen, Peer Lehnen and Tiao-Yuan Huang, “Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO2 Gate Stacks by Post Deposition N2O Plasma Treatment”, Japanese Journal of Applied Physics, Vol. 44, No. 11, pp. 7869-7875, Nov. 2005.
93. Ming-Jui Yang, Chao-Hsin Chien, Yi-Hsien Lu, Chih-Yen Shen, and Tiao-Yuan Huang, “Electrical Properties of Low-Temperature-Compatible P-Channel Polycrystalline-Silicon TFTs Using High-κ Gate Dielectrics”, IEEE Transactions on Electron Devices, Vol. 55, No. 4, pp. 1027-1034, April 2008.
94. Ming-Jui Yang, Chao-Hsin Chien, Chih-Yen Shen, and Tiao-Yuan Huang, “Properties of Ge Films Grown Through Inductively Coupled Plasma Chemical Vapor Deposition on SiO2 Substrates”, Journal of The Electrochemical Society, Vol. 155, No. 6, pp. H363-H368, April 2008.
95. Ching-Chich Leu, Chen-Han Lin, Chao-Hsin Chien, and Ming-Jui Yang, “Effect of HfO2 buffer layer thickness on the Properties of Pt/SrBi2Ta2O9/HfO2/Si structure”, Journal of Materials Research, Vol. 23, No.7, pp. 2023-2032, July 2008.
96. D. Heh, P.D. Kirsch, C.D. Young, and G. Bersuker, “A new dielectric degradation phenomenon in nMOS high-k devices under positive bias stress,” IRPS, pp. 347-351, 2008.
97. J. Huang, P.D. Kirsch, D.C. Gilmer, P. Sivasubramani, J. Price, S.H. Lee, D. Heh, C. Young, J. Oh, C.S. Park, Y. N. Tan, C. Park, P.Y. Hung, P. Lysaght, P. Majhi, H.R. Harris, G. Bersuker, K.J. Choi, B.J. Cho, H.H. Tseng, B.H. Lee, and R. Jammy, “Mechanism of High Gate Leakage Current on Surface Channel SiGe pFETs with HfSiON Dielectric and a Method to Enable sub-1nm EOT for the Gate First Process,” VLSI, pp. 82-83, 2008.
98. C.Y. Kang, C.S. Park, D. Heh, C. Young, P. Kirsch, H.B. Park, R. Choi, G. Bersuker, J.W. Yang, B.H. Lee, J. Lichtenwalner, J.S. Jur, A.I. Kingon, and R. Jammy, “Performance and reliability characteristics of the band edge high-k/metal gate nMOSFETs with La-doped Hf-silicate gate dielectrics,” IRPS, pp. 663-664, 2008.
99. D. Heh, C.D. Young, and G. Bersuker, “Experimental Evidence of the Fast and Slow Charge Trapping/Detrapping Processes in High-k Dielectrics Subjected to PBTI Stress,” IEEE Electron Device Letters, vol. 29, pp. 180-182, 2008.
100. P. Majhi, P. Kalra, R. Harris, K.J. Choi, D. Heh, J. Oh, D. Kelly, R. Choi, B.J. Cho, S. Banerjee, W. Tsai, H.H. Tseng, and R. Jammy, “Demonstration of High-Performance PMOSFETs Using Si– SixGe1-x –Si Quantum Wells With High-_/Metal-Gate Stacks,” IEEE Electron Device Letters, vol. 29, pp. 99-101, 2008.
101. K.S. Min, C.Y. Kang, O.S. Yoo, B.J. Park, S.W. Kim, C.D. Young, D. Heh, G. Bersuker, B.H. Lee, and G.Y. Yeom, “Plasma induced damage of aggressively scaled gate dielectric (EOT ＜＜ 1.0nm) in metal gate/high-k dielectric CMOSFETs,” IRPS, pp. 723-724, 2008.
102. H.D. Xiong, D. Heh, S. Yang, X. Zhu, M. Gurfinkel, G. Bersuker, D.E. Ioannou, C.A. Richter, K.P. Cheung, and J.S. Suehle, “Stress-induced defect generation in HfO2/SiO2 stacks observed by using charge pumping and low frequency noise measurements,” IRPS, pp. 319-323, 2008.
103. J. Huang, P.D. Kirsch, M. Hussain, D. Heh, P. Sivasubramani, C. Young, D.C. Gilmer, C.S. Park, Y.N. Tan, C. Park, H.R. Harris, P. Majhi, G. Bersuker, B.H. Lee, H.H. Tseng, and R. Jammy, “Gate First Band Edge High-k/Metal Stacks with EOT=0.74nm for 22nm Node nFETs,” VLSI-TSA, pp. 152-153, 2008.
104. Y.N. Tan, H.C. Wen, C. Park, D.C. Gilmer, C.D. Young, D. Heh, P. Sivasubramani, J. Huang, P. Majhi, P.D. Kirsch, B.H. Lee, H.H. Tseng, and R. Jammy, “Tunnel Oxide Dipole Engineering in TANOS Flash Memory for Fast Programming with Good Retention and Endurance,” VLSI-TSA, pp. 54-55, 2008.
105. J. Huang, P.D. Kirsch, D. Heh, C.Y. Kang, G. Bersuker, M. Hussain, P. Majhi, P. Sivasubramani, D.C. Gilmer, aN. Goel, M.A. Quevedo-Lopez, C. Young, C.S. Park, C. Park, P. Y. Hung, J. Price, H.R. Harris, B.H. Lee, H.H. Tseng, and R. Jammy, “Device and Reliability Improvement of HfSiON+LaOx/Metal Gate Stacks for 22nm Node Application,” IEDM, 2008.
106. .Y. Kang, C.D. Young, J. Huang, P. Kirsch, D. Heh, P. Sivasubramani, H. K. Park, G, Bersuker, B. H. Lee, H.S. Choi1, K.T. Lee1, Y-H. Jeong1, J. Lichtenwalner, A. I. Kingon, H.H. Tseng and R. Jammy, “The Impact of La-doping on the Reliability of Low Vth High-k/Metal Gate nMOSFETs under Various Gate Stress Conditions,” IEDM, 2008.
107. G. Bersuker, D. Heh, C. Young, H. Park, P. Khanal, L. Larcher1, A. Padovani, P. Lenahan, J. Ryan, B.H. Lee, H. Tseng, and R. Jammy, “Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric,” IEDM, 2008.
108. N. Goela, D. Heh, S. Koveshnikova, I. Ok, S. Oktyabrskyc, V. Tokranovc, R. Kambhampatic, M.Yakimovc, Y. Sund, P. Pianettad, C.K. Gaspee, M.B. Santose, J. Leef, S. Dattag, P. Majhia, and W. Tsaia, “Addressing The Gate Stack Challenge For High Mobility InxGa1-xAs Channels For NFETs,” IEDM, 2008.
109. C.Y. Kang, P.D. Kirsch, D. Heh, C.D. Young, P. Sivasubramani, G. Bersuker, S.C. Song, R. Choi, B.H. Lee, D.J. Lichtenwalner, J. S. Jur, A.I. Kingon, and R. Jammy, “NMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO2,” SSDM, 2008
110. H. Park, G. Bersuer, N. Goel, D. Gilmer, D. Heh, C.Y. Kang, H.H. Tseng, P.D. Kirsch, and R. Jammy, “Degradation behavior of TANOS memory devices in retention mode,” NVMTS, 2008.
111. D. Heh, P.D. Kirsch, C.D. Young, C.Y. Kang, and G. Bersuker, “New Defect generation in Nitrogen Contented nMOS High-k Devices,” in Integrated Reliability Workshop final report, pp. 103-106, 2007
112. . Heh, C.D. Young, R. Choi, and G. Bersuker, “Extraction of the Threshold-voltage Shift by the Single-Pulse Technique,” IEEE Electron Device Letters, vol. 28, pp. 734-736, 2007.
113. D. Heh, R. Choi, and G. Bersuker, “Comparison of On-The-Fly and Single Pulse Methods for Evaluating Threshold Voltage Instability in High-k NMOSFETs,” IEEE Electron Device Letters, vol. 28, pp. 245-247, 2007.
114. D. Heh, “Overview of Electrical Characterization and Reliability on MOSFET,” Invited talk, National Tsing-Hua University, Hsinchu Taiwan 2007.
115. D. Heh, C.D. Young, G.A. Brown, P.Y. Hung, A. Diebold, E.M. Vogel, J.B. Bernstein, and G. Bersuker, “Spatial Distributions of Trapping Centers in HfO2/SiO2 Gate Stack,” IEEE Trans. Electron Devices, vol. 54, pp. 1338-1445, 2007.
116. H.D. Xiong, D. Heh, M. Gurfinkel, Q.Li, Y. Shapira, C. Richter, G. Bersuker, R. Choi, and J.S. Suehle, “Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements,”, Microelectronic Engineering, vol 84, pp. 2230-2234,2007.
117. S. Joshi, C. Krug, D. Heh, H.J. Na, H.R. Harris, J.W. Oh, P.D. Kirsch, P. Majhi, B.H. Lee, H.H. Tseng, R. Jammy, J.C. Lee, and S.K. Banerjee, “Improved Ge Surface Passivation With Ultrathin SiOX Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack,” IEEE Electron Device Letters, vol. 28, pp. 308-311, 2007.
118. . Bersuker, N. Chowdhury, C. Young, D. Heh, D. Misra, and R. Choi, “Progressive Breakdown Characteristics of High-K/Metal Gate Stacks,” IRPS, pp. 49-54, 2007.
119. P. Kalra, P. Majhi, D. Heh, G. Bersuker, C. Young, N. Vora, R. Harris, P. Kirsch, R. Choi, M.Chang, J. Lee, H. Hwang, H.H. Tseng, R. Jammy, and T.K. Liu, “Impact of Flash Annealing on Performance and Reliability of High-y/Metal-Gate MOSFETs for sub-45nm CMOS,” IEDM, pp. 353-356, 2007.
120. S. Suthram, P. Majhi, G. Sun, P. Kalra, H.R. Harris, K.J. Choi, D. Heh, J. Oh, D. Kelly, R. Choi, B.J. Cho, M.M. Hussain, C. Smith, S. Banerjee, W. Tsai, S.E. Thompson, H.H. Tseng, and R. Jammy, “High Performance pMOSFETs Using Si/Si1-xGex/Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node,” IEDM, pp. 727-730, 2007.
121. . Choi, C. Young, C.Y. Kang; D. Heh, G. Bersuker, S. Krishnan; P.D. Kirsch, A. Neugroschel, S.C. Song, B.H. Lee, and R. Jammy, “Reliability Assessment on Highly Manufacturable MOSFETs with Metal Gate and Hf based Gate Dielectrics,” IPFA, pp. 26-29, 2007.
122. K.T. Lee, J. Schmitz, G.A. Brown, D. Heh, R. Choi, R. Harris, S.C. Song, B.H. Lee, I.S. Han, H.D. Lee, and Y.H. Jeong, “Test Structures for Accurate UHF C-V Measurements of Nano-Scale CMOSFETs with HfSiON and TiN Metal Gate,” ICMTS, pp. 124-127, 2007.
123. H.D. Xiong, D. Heh, Moshe Gurfinkel, Qiliang Li, Yoram Shapira, C. Richter, Gennadi Bersuker, Rino Choi, and J.S. Suehle, “Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise, charge pumping measurements,” INFOS, 2007
124. D. Heh, R. Choi, C. D. Young, B. H. Lee, G. Bersuker, “A Novel Bias Temperature Instability Characterization Methodology for High-k nMOSFETs,” IEEE Electron Device Letters, vol. 27, pp. 849-851, 2006.
125. D. Heh, E.M. Vogel, J.B. Bernstein, C.D. Young, G.A. Brown, P.Y. Hung, A. Diebold, and G. Bersuker, “Spatial distributions of trapping centers in HfO2/SiO2 gate stacks,” APL., vol. 88, p. 152907, 2006.
126. D. Heh, Rino Choi, Chadwin D. Young, and Gennadi Bersuker, “Fast and slow charge trapping/detrapping processes in high-k nMOSFETs,” in Integrated Reliability Workshop final report, pp. 120-124, 2006.
127. D. Heh, Rino Choi, Chadwin D. Young, Byoung Hun Lee, and Gennadi Bersuker, “A novel bias temperature instability characterization methodology for high-k MOSFETs,” European Solid-State Device Research Conference, pp. 387-390, 2006.
128. C. D. Young, D. Heh, S. V. Nadkarni, Rino Choi, J. J. Peterson, J. Barnett, Byoung Hun Lee, and G. Bersuker, “Electron trap generation in high-k gate stacks by constant voltage stress,” IEEE Trans. Device and Material Reliab., vol. 6, pp. 123-131, 2006.
129. C. D. Young, S. Nadkarni, D. Heh, H. R. Harris, R. Choi, J. J. Peterson, J. H. Sim, S. A. Krishnan, J. Barnett, E. Vogel, B. H. Lee, P. Zeitzoff, G. A. Brown, and G. Bersuker, “Detection of Electron Trap Generation due to Constant Voltage Stress on High-k Gate Stacks,” IRPS, pp. 169-173, 2006.
130. C. D. Young, D. Heh, R. Choi, J. J. Peterson, J. Barnett, B. H. Lee, P. Zeitzoff, G. A. Brown, and G. Bersuker, “Detection of Trap Generation in High-k Gate Stacks due to Constant Voltage Stress,” VLSI-TSA, pp. 1-2, 2006.
131. C. D. Young, Rino Choi, D. Heh, A. Neugroschel, Hokyung Park, Chang Yong Kang, G. A. Brown, Seung Chul Song, Byoung Hun Lee, and G. Bersuker, “Assessment of Process-Induced Damage in High-κ Transistors,” ICICDT, pp. 1-4, 2006.
132. D. Heh, Chadwin D. Young, Rino Choi, and Gennadi Bersuker, “Extraction of the Threshold Voltage Shift by the Single Pulse Technique,” IEEE Electron Device Letters, vol. 28, 734-736, 2006.
133. C.Y. Kang, R. Choi, S.C. Song, K. Choi, B.S. Ju, M.M. Hussain, B.H. Lee, G. Bersuker, C. Young, D. Heh, P. Kirsch, J. Barnet, J.W. Yang, W. Xiong, H.H. Tseng, and R. Jammy, “A Novel Electrode-Induced Strain Engineering for High Performance SOI FinFET utilizing Si 110 Channel for Both N and PMOSFETs,” IEDM, pp. 1-4, 2006.
134. . Choi, D. Heh, C.Y. Kang, C. Young, G. Bersuker, and B.H. Lee, “Comparison of novel BTI measurements for high-k dielectric MOSFETs,” ICICDT, pp. 1117-1118, 2006.
135. A. Neugroschel, G. Bersuker, R. Choi, C. Cochrane, P. Lenahan, D. Heh, C. Young, C.Y. Kang, B.H. Lee, and R. Jammy, “An Accurate Lifetime Analysis Methodology Incorporating Governing NBTI Mechanisms in High-k/SiO2 Gate Stacks,” IEDM, pp. 1-4, 2006.
136. H.R. Harris, H. Alshareef, H.C. Wen, S. Krishnan, K. Choi, H. Luan, D. Heh, C.S. Park, H.B. Park, M. Hussain, B.S. Ju, P.D. Kirsch, S.C. Song, P. Majhi, B.H. Lee, and R. Jammy, “Simplified manufacturable band edge metal gate solution for NMOS without a capping layer,” IEDM, pp. 1-4, 2006.
137. E. M. Vogel, D. Heh, “Characterization of electrically active defects in high-k gate dielectrics using charge pumping,” in NATO Advanced Research Workshop on Defects in Advanced High-k Dielectric Nanoelectronic Semiconductor Devices, pp. 85-96, 2005
138. C.D. Young, D. Heh, S. Nadkarni, R. Choi, J.J. Peterson, H.R. Harris, J.H. Sim, S.A. Krishnan, J. Barnett, E.M. Vogel, B.H. Lee, P. Zeitzoff, G.A. Brown, and G. Bersuker, “Detection of trap generation in high-k gate stacks,” in Integrated Reliability Workshop final report, pp. 79-83, 2005.
139. D. Heh and E.M. Vogel, “Depth profiles of electrically active defects in high-k gate stacks using charge pumping,” Advanced Gate Stack Engineering working Group Biannual Meeting, Austin Texas, 2005.
140. D. Heh, E.M. Vogel, and Bernstein, “New insights into threshold voltage shifts for ultrathin gate oxides [MOSFETs],” in Integrated Reliability Workshop final report, pp. 99-101, 2004.
141. J.P. Han, E.M. Vogel, E.P. Gusev, C. D'Emic, C.A. Richter, D. Heh, and J.S. Suehle, “Asymmetric energy distribution of interface traps in n- and p-MOSFETs with HfO2 gate dielectricon ultrathin SiON buffer layer,” IEEE Electron Device Letters, vol. 25, pp. 126-128, 2004.
142. J.P. Han, E.M. Vogel, E.P. Gusev, C. D'Emic, C.A. Richter, D. Heh, and J.S. Suehle, “Energy distribution of interface traps in high-k gated MOSFETs,” VLSI, pp. 161-162, 2003.
143. D. Heh, E. M. Vogel, and J. B. Bernstein, ‘Impact of Substrate Hot Hole Injection on Ultra-thin Silicon Dioxide Breakdown,’ Applied Physics Letters, vol. 82, pp. 3242-3244, 2003.
144. D. Heh, E.M. Vogel, and J.B. Bernstein, “Defect generation in ultra-thin oxide over large fluence range,” in Integrated Reliability Workshop final report, pp. 9-13, 2002.
145. E.M. Vogel, D. Heh; J.B. Bernstein, and J.S. Suehle, “Impact of the trapping of anode hot holes on silicon dioxide breakdown,” IEEE Electron Device Letters, vol. 23, pp. 667-669, 2002.
146. E. M. Vogel, D. Heh, and J. B. Bernstein, ‘Interaction between low energy electrons and defects created by hot holes in ultra-thin silicon dioxide,’ Applied Physics Letters, vol. 80, pp. 3343-3345, 2002.
147. D. Heh, E.M. Vogel, and J.B. Bernstein, “Relevance of injected hot holes on the breakdown of ultra-thin silicon-dioxide metal-oxide-semiconductor devices,” American Physical Society March Meeting, Indianapolis Indiana, 2002.
148. E.M. Vogel, D. Heh, B. Wang, C.E. Weintrab, J.S. Suehle, M.D. Edelstein, and J.B. Bernstein, “Interaction of electrons with defects created by hot holes in ultra-thin silicon dioxide,” IEEE Semiconductor Interface Specialists Conference, Washington D.C., 2001.
149. K. M. Liu, W. Chen, L. F. Register and S. Banerjee, “Schrodinger Equation Monte Carlo-3D for Simulation of Carrier Transport in Nanowire MOSFETs,” Journal of Applied Physics, Vol. 104, Issue 11, Dec. 2008.
• 會議論文
1. Tzu I Tsai, Yao-Jen Lee, King-Sheng Chen, Jeff Wang, Chia-Chen Wan, Horng-Chih Lin, Tien-Sheng Chao,” Impacts of a Buffer Layer and Hi-wafers on the Performance of Strained-Channel NMOSFETs with SiN Capping Layer,” to be reported in the 2007 International Electron Device and Material Symposia (IEDMS), Tainan, Taiwan, December 2007. (best paper award)
2. Yao-Jen Lee, Tzu I Tsai, King-Sheng Chen, Jeff Wang, Chia-Chen Wan, Fu-Kuo Hsueh, Horng-Chih Lin, Tien-Sheng Chao, Tiao-Yuan Huang,” Reliability of Strained-channel NMOSFETs with SiN Capping Layer on Hi-wafers with a thin LPCVD-TEOS buffer layer,” ISDRS 2007.
3. Yao-Jen Lee, Chia-Hao Fan, Wen-Yan Lin, Bohr-Ran Huang, Wen-Luh Yang, Tien-Sheng Chao, D.S.Chuu, “Local Strained Channel nMOSFETs by Different Poly-Si Gate and SiN Capping Layer Thicknesses: Mobility, Size Dependence, and Hot Carrier Stress,” reported in the 2006 IEEE IPFA , Signore (July 5~7, 2006)
4. Ching-Sen Lu, Chih-Cheng Chao, Chia-Yu Lu, Yao-Jen Lee, Horng-Chih Lin,and Tiao-Yuan Huang, “The Effect of Hydrogen Species on the Performance and Reliability of PMOS Transistors with Si1-xGex Gate,” to be reported in the 2006 International Electron Device and Material Symposia (IEDMS), Tainan, Taiwan, December 2006.
5. Chia-Yu Lu, Yu-Lin Hsieh, Ching-Sen Lu, Yao-Jen Lee, Horng-Chih Lin and Tiao- Yuan Huang, “The application and Impact of LPCVD SiN-Capping on NMOSFET’s Performance and Reliability,” to be reported in the 2006 International Electron Device and Material Symposia (IEDMS), Tainan, Taiwan, December 2006. (best paper award)
6. Yao-Jen Lee, Tien-Sheng Chao, Chun-Yang Huang, Horng-Chih Lin, Yiming Li and Tiao-Yuan Huang, “ Temperature dependence of threshold voltage and hot carrier degradation of dynamic threshold SOI-pMOSFETs” SSDM 2003
7. Han-Ching Lin , Shiao-Wei Kuo, Chih-Feng Huang, Feng-Chih Chang.” Thermal and Surface Properties of Phenolic Nanocomposites Containing Octaphenol Polyhedral Oligomeric Silsesquioxane “ the 29th POC Polymer Symposium, 2005, EP-A-32。
8. Han-Ching Lin , Shiao-Wei Kuo, Chih-Feng Huang, Feng-Chih Chang. ” 新型酚醛樹酯奈米複合材料之熱及表面特性 “ 海峽兩岸三地化工類博士生學術論壇, 2006, G29。(oral)
9. Jiann Shieh, Bing Shian Chen, Fu Ju Hou, Shun Po Yang, Wen Hsien Huang, Chao Chia Cheng, “Low-reflective hydrophilic Silicon Nanograss” 33th Micro- and Nano-Engineering (oral). Sep. 93-26, 2007, Copenhagen, Denmark.
10. Jiann Shieh, Bing Shian Chen, Fu Ju Hou, Shun Po Yang, Wen Hsien Huang, Chao Chia Cheng, “Low-reflective hydrophilic Silicon Nanograss” Micro- and Nano-Engineering (oral). Sep. 23-26, 2007, Copenhagen, Denmark.
11. Jiann Shieh and Ming-Che Yang, “Large-area antireflection subwavelength nanograss structure prepared by hydrogen plasma etching” E-MRS 2006 Spring Meeting. May 29-Jun. 2, Nice, France.
12. J. Shieh, C.C. Hsu, M.C. Yang, and T.C. Cheng, “Well-aligned Silicon Nanograss Fabricated by Hydrogen Plasma Etching without Mask and Catalyst” European Congress on Advanced Materials and Processes, Sep. 5-8, 2005, Prague, Czech Republic.
13. J. Shieh and M. H. Hon, “Observation of plastic deformation in TiAlCN/a-C ceramic nanocomposite coating” AVS 51st International Symposium & Exhibition, Nov. 14-19, 2004, Anaheim, CA, USA.
14. Ming-Che Yang , Jiann Shieh, Tsung-Shine Ko, Hsuen-Li Chen, and Tieh-Chi Chu “Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS mechanism” 2004 International Microprocesses and Nanotechnology Conference, Oct. 26-29, 2004, Osaka, Japan.
15. Wei-Hao Lai, Chien-Shuen Liao, Jiann Shieh, Lay-Gaik Teoh, I-Ming Hung, Min-Hsiung Hon, “Effect of copolymer and additive concentrations on the behaviors of mesoporous tungsten oxide” International Mesostructured Materials Symposium, 1-4 May 2004, Cape Town, South Africa.
16. L. G. Teoh, J. Shieh, W. H. Lai and M. H. Hon, “Preparation of Mesoporous WO3 Nanocrystalline Thin Films for Sensor Application” 1st International Symposium on Active Nano-Characterization and Technology, Nov. 11-Nov. 14, 2003, National Institute for Materials Science, Tsukuba, Japan.
17. Jiann Shieh and Min Hsiung Hon, “Plasma enhanced chemical vapor deposition of titanium aluminum carbonitride/amorphous-carbon nanocomposite thin films”, Second Asia-Pacific International Symposium on the Basis and Application of Plasma Technology, Kaohsiung, 2001.
18. J. Shieh, H.L. Wang, M. S. Tsai, and M. H. Hon, “Functionally gradient PECVD Ti(C,N) coatings”, Mat. Res. Soc. Symp. Proc. 555, 407 (1999). (EI)
19. Jung-Yen Yang*, Shich-Chang Suen and Wha-Tzong Whang, “Characterization of Hydrogen Treated Pentacene OTFTs”, Jpn. J. Appl. Phys. 43, 2366-2369, 2004.
20. Jung-Yen Yang*, “Pillar Directed Cell Growth”, Imaging & Microscopy 8 (4) 2006. (Invited paper)
21. Jung-Yen Yang, Yen-Chung Ting, Juin-Yih Lai, Hsuan-Liang Liu, Hsu-Wei Fang, Wei-Bor Tsai, “Quantitative analysis of osteoblast-like cells (MG63) morphology on nanogrooved substrata with various groove and ridge dimensions”, Journal of Biomedical Materials Research: Part A, (In Press)
22. Wen-Ta Su, Jung-Yen Yang*, Chuan-Ding Lin and I-Ming Chu, “Control Cell Behavior on Physical Topographical Surface”, Jpn. J. Appl. Phys. 43, 3806-3809, 2004.
23. Wen-Ta Su, I-Ming Chu, Jung-Yen Yang, and Chuan-Ding Lin, “The geometric pattern of a pillared substrate influences the cell-process distribution and shapes of fibroblasts”, Micron 37, 699-706, 2006.
24. Y. C. Hsieh, E. Y. Chang, G. L. Luo, M. H. Pilkuhn, S. S. Tang, C. Y. Chang, J. Y. Yang, and H. W. Chung, “Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1?x metamorphic buffer layer for the growth of Ge layer on Si substrate”, Appl. Phys. Lett. 90, 083507, 2007.
25. Chia-Hao Chang, Chao-Hsin Chien, and Jung-Yen Yang, “Pentacene-based thin-film transistors with multiwalled carbon nanotube source and drain electrodes”, Appl. Phys. Lett. 91, 083502, 2007.
26. Tsung Chieh Cheng, Tsing Fa Lin, Jung Yen Yang, and Sheng Rui Jian, “Visualization of Vortex Flow Patterns with a Uniformly Perforated Showerhead in a Model Lamp Heat, Single-Wafer Thermal Processor”, Chem. Vap. Deposition 13, 427, 2007.
27. Jyh-Hua Ting, Ching-Chou Chang, Mu-Chih Cheng, Jwo-Lun Hsu, Fuang-Yuan Huang, ”Study of Carbon Nanotubes for Electronic Applications”, 2004 VLSI Multilevel Interconnection Conference (VMIC), Institute of Microelectronic InterConnection (IMIC), September 29-October 2, 2004, Hawaii, U.S.A., p.379.
28. Jyh-Hua Ting, Ching-Chieh Chiu, Fuang-Yuan Huang, “Carbon nanotube array vias for interconnect applications”, European Nano Systems (ENS) 2006, Dec. 14-15, 2006, Paris, France, pp.31-36.
29. Jyh-Hua Ting, Tsung-Lung Li, Chia-Hao Wang, Yung-Sen Chen, Fuang-Yuan Huang, Arben Merkoci, “A novel carbon nanotube based sensor for the detection of glucose oxidation”, 1st Asian Biomaterials Congress (1st ABMC), Dec. 6-8, 2007, Tsukuba, Japan.
30. Jyh-Hua Ting, Jhih-Yuan Lyu, Fuang-Yuan Huang, Tsung-Lung Li, Cho-Lun Hsu, Chien-Wei Liu, “Synthesis of Single-Wall Carbon Nanotubes by Atmospheric Thermal CVD”, 2008 17th Biennial University / Government / Industry Micro-Nano Symposium (UGIM 2008), July 13-16, 2008, Louisville, Kentucky, U.S.A., pp. 157-160.
31. C. W. Lin, M. Z. Yang, C. C. Yeh, L. J. Cheng, T. Y. Huang, H. C. Cheng, H. C. Lin, T. S. Chao, and C. Y. Change, “Effects of Plasma Treatments, Substrate Types, and Crystallization Methods on Performance and Reliability of Low Temperature Polysilicon TFTs”, in IEDM Technical Digest, pp. 305-308, December 5-8, 1999, Washington, D.C., America.
32. Ming-Jui Yang, Guang-Li Luo, Tiao-Yuan Huang, and Chao-Hsin Chien, “The characteristics of re-crystallized low-temperature- grown Ge films on SiO2 substrate”, in 17th International Vacuum Congress and 13th International Conference on Surface Science International Conference on Nano Science and Technology, July 2-6, 2007, Stockholm, Sweden.
33. Sheng-Chih Lai, Hang-Ting Lue, Chien-Wei Liao, Yu-Fong Huang, Ming-Jui Yang, Yi-Hsien Lue, Tai-Bor Wu, Jung-Yu Hsieh, Szu-Yu Wang, Shih-Ping Hong, Fang-Hao Hsu, Chih-Yen Shen, Guang-Li Luo, Chao-Hsin Chien, Kuang-Yeu Hsieh, Rich Liu and Chih-Yuan Lu, “An Oxide-Buffered BE-MANOS Charge-Trapping Device and the Role of Al2O3”, in the 2008 Non Volatile Semiconductor Memory Workshop (NVSMW 2008), May 18th -22nd, 2008, Opio, France
34. Sheng-Chih Lai, Hang-Ting Lue, Jung-Yu Hsieh, Ming-Jui Yang, Yan-Kai Chiou, Chia-Wei Wu, Tai-Bor Wu, Guang-Li Luo, Chao-Hsin Chien, Erh-Kun Lai, Kuang-Yeu Hsieh, Rich Liu and Chih-Yuan Lu, “A Study on the Erase and Retention Mechanisms for MONOS, MANOS, and BE-SONOS Non-Volatile Memory Devices”, in The 2007 International Symposium on VLSI Technology, Systems, and Applications (2007 VLSI-TSA), April 23-25, 2007, Hsinchu, Taiwan.
35. Sheng-Chih Lai, Hang-Ting Lue, Chien-Wei Liao, Tai-Bor Wu, Ming-Jui Yang, Yi-Hsien Lue, Jung-Yu Hsieh, Szu-Yu Wang, Guang-Li Luo, Chao-Hsin Chien, Kuang-Yeu Hsieh, Rich Liu, and Chih-Yuan Lu, “Highly Reliable MA BE-SONOS (Metal-Al2O3 Bandgap Engineered SONOS) Using a SiO2 Buffer Layer”, in The 2008 International Symposium on VLSI Technology, Systems, and Applications (2008 VLSI-TSA), April 21-25, 2008, Hsinchu, Taiwan.
36. K. M. Liu, W. Chen, L. F. Register and S. Banerjee, “Schrodinger Equation Monte Carlo-3D for Simulation of Nanoscale MOSFETs,” IEEE Review of Advances on Micro, Nano, and Molecular Systems, IEEE-NANO 2007.
• 專書論文
1. K. M. Liu, “A New Quantum Transport Simulator -- Schrodinger Equation Monte Carlo-3D”, VDM Co., ISBN: 978-3-639-15071-1, 2009
• 專利
1. 羅廣禮, 張翼, 楊宗(火喜), 張俊彥, “在矽基板上成長高品質鍺薄膜”, 中華民國專利, No: I221009
2. Chang EY, Luo GL, Yang TH, Chang CY, “Growth of high-quality of GaAs on Si by using a novel SiGe buffer”, US patent: 7259084; 中華民國專利, No: I221001
3. Yang TH, Luo GL, Chang CY, “Novel technique to grow high quality ZnSe epitaxy layer on Si substrate”, US Patent, No. 7071087; 中華民國專利, No: I246116.
4. 羅廣禮, 簡昭欣, “以[110]單軸拉伸應變提升電子遷移率之Ge nMOSFET構造”,中華民國專利, No. I290360
5. 羅廣禮,“在矽（１１０）基板上設有壓縮應變矽鍺通道之Ｎ型金氧半電晶體架構”,中華民國專利, No. I303879
6. "形成電子裝置閘極圖案之方法" , 中華民國專利號碼I265564，2006年11月01日.
7. “一種形成半導體深次微米線寬結構的方法,中華民國專利號碼200826192, 2008/06/16
8. 洪敏雄, 謝健, 高韌性與高附著性鈦鋁碳氮-非晶質碳奈米複合陶瓷鍍層(中華民國專利178399，美國專利申請中）
9. 謝健, 柯宗憲, 陳學禮, 謝嘉民, 戴寶通, 朱鐵吉, 以金奈米粒子輔助成長半導體量子點的製作方法（中華民國專利I253480）
10. 謝健, 柯宗憲, 陳學禮, 謝嘉民, 戴寶通, 朱鐵吉, 奈米多孔性半導體薄膜的製作方法（中華民國專利I232892）
11. 楊閔智, 謝健, 許瓊姿, 鄭宗杰, 以氫電漿蝕刻法製作奈米線與量子點（中華民國專利I254378；韓國專利10-0736401；日本專利申請中）
12. Time Domain Reflectometry Application in Capacitance-Voltage Measurement（pending）