組別：奈米能源與光電元件組

姓名：沈昌宏

職稱：副研究員

學歷：

• 國立中山大學物理系學士
• 國立清華大學物理研究所碩士
• 國立清華大學物理研究所博士

經歷：

• 茂矽電子公司研發工程師
• 現為國家奈米元件實驗室副研究員

研究與技術專長：

• 太陽能電池
• 氮化物三五族半導體
• 奈米科學

個人著作：(點擊以展開)

• 期刊論文
1. S. Gwo, C.-L. Wu, C.-H. Shen, W.-H. Chang, T. M. Hsu, J.-S. Wang, and J.-T. Hsu, “Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature”, Appl. Phys. Lett. 84, 3765–3767, (2004).
2. C.-L. Wu, C.-H. Shen, H.-W. Lee, H.-M. Lee, and S. Gwo, “Direct evidence of 8:9 commensurate heterojunction formed between InN and AlN on c-plane”, Appl. Phys. Lett. 87, 241916, (2005).
3. H. Ahn, C.-H. Shen, C.-L. Wu, and S. Gwo, “Spectroscopic ellipsometry study of wurtzite InN epitaxial films on Si(111) with varying carrier concentrations”, Appl. Phys. Lett. 86, 201905, (2005).
4. H. Ahn, C.-H. Shen, C. -L. Wu, and S. Gwo, “Carrier concentration dependent optical properties of wurtzite InN epitaxial films on Si(111) studied by spectroscopic ellipsometry”, Thin Solid Films 494, 69–73, (2006).
5. C.-L. Wu, C.-H. Shen, and S. Gwo, “Valence band offset of wurtzite InN/AlN heterojunction determined by photoelectron spectroscopy”, Appl. Phys. Lett. 88, 032105, (2006).
6. C.-H. Shen , H.-W. Lin , H.-M. Lee , C.-L. Wu , J.-T. Hsu , and S. Gwo, “Self-assembled InN quantum dots grown on AlN Si(111) and GaN Al2O3(0001) by plasma-assisted molecular-beam epitaxy under Stranski Krastanow mode”, Thin Solid Films 494, 79-83, (2006).
7. C.-L Wu, C.-H. Shen, H.-Y. Chen, S.-J. Tsai, H.-W. Lin, H.-M. Lee, S. Gwo, T.-F. Chuang, H.-S. Chang, and T.M. Hsu, “The effects of AlN buffer on the properties of InN epitaxial films grown on Si(1 1 1) by plasma-assisted molecular-beam epitaxy”, J. of crystal growth 288, 247-253, (2006).
8. S. Gwo, C.-L. Wu, C.-H. Shen, H.-W. Lin, H.-Y. Chen, and H. Ahn, “InN-on-Si heteroepitaxy: growth, optical properties, and applications”, Proc. SPIE 6134, 61340L, (2006).
9. C.-H. Shen, H.-Y. Chen, H.-W. Lin, S. Gwo, A. A. Klochikhin and V. Yu. Davydov, “Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer”, Appl. Phys. Lett. 88, 253104 (2006).
10. H.-Y. Chen, C.-H. Shen, H.-W. Lin, C.-H. Chen, C.-Y. Wu, and S. Gwo, “Near-Infrared Photoluminescence of Vertically Aligned InN Nanorods Grown on Si(111) by Plasma-Assisted Molecular-Beam Epitaxy”, Thin Solid Films. 515, 961(2006).
11. H.-Y. Chen, H-W Lin, C.-H. Shen, and S. Gwo, “Structure and photoluminescence properties of epitaxially oriented GaN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy”, Appl. Phys. Lett. 89, 243105(2006).
12. Y.-C. Wen, C.-Y. Chen, C.-H. Shen, S. Gwo and C.-K. Sun “Ultrafast carrier thermalization in InN”, Appl. Phys. Lett. 89, 232114(2006).
13. Y.-M. Chang H. W. Chu, C.-H. Shen, H.-Y. Chen, and S. Gwo “Determination of the electron effective mass of wurtzite InN by coherent upper-branch A(1)(LO) phonon-plasmon coupling mode”, Appl. Phys. Lett. 90, 072111(2007).
14. Y.-M. Chang H. W. Chu, C.-H. Shen, and S. Gwo “Identification of surface optical phonon in wurtzite InN epitaxial thin films by coherent phonon spectroscopy” ,Appl. Phys. Lett. 90, 072111(2007).
• 會議論文
• 專書論文
1. S. Gwo, C.-L. Wu, C.-H. Shen,et al., “Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature”, Appl. Phys. Lett. 84, 3765–3767, 2004.
2. C.-L. Wu, C.-H. Shen, et al., “Direct evidence of 8:9 commensurate heterojunction formed between InN and AlN on c-plane”, Appl. Phys. Lett. 87, 241916, 2005.
3. H. Ahn, C.-H. Shen, C.-L. Wu, and S. Gwo, “Spectroscopic ellipsometry study of wurtzite InN epitaxial films on Si(111) with varying carrier concentrations”, Appl. Phys. Lett. 86, 201905, 2005.
4. C.-L. Wu, C.-H. Shen, and S. Gwo, “Valence band offset of wurtzite InN/AlN heterojunction determined by photoelectron spectroscopy”, Appl. Phys. Lett. 88, 032105, 2006.
5. C.-H. Shen , H.-W. Lin , H.-M. Lee , C.-L. Wu , J.-T. Hsu , and S. Gwo, “Self-assembled InN quantum dots grown on AlN Si(111) and GaN Al2O3(0001) by plasma-assisted molecular-beam epitaxy under Stranski Krastanow mode”, Thin Solid Films 494, 79-83, 2006.
6. C.-H. Shen, H.-Y. Chen, H.-W. Lin, S. Gwo, A. A. Klochikhin and V. Yu. Davydov, “Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer”, Appl. Phys. Lett. 88, 253104 (2006).
7. Y.-C. Wen, C.-Y. Chen, C.-H. Shen, S. Gwo and C.-K. Sun “Ultrafast carrier thermalization in InN”, Appl. Phys. Lett. 89, 232114 (2006).
8. Y.-M. Chang H. W. Chu, C.-H. Shen, H.-Y. Chen, and S. Gwo “Determination of the electron effective mass of wurtzite InN by coherent upper-branch A(1)(LO) phonon-plasmon coupling mode”, Appl. Phys. Lett. 90, 072111 (2007).
• 專利